Electron Cyclotron Resonance Plasma Etching of α-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture

The etching of α-Ta deposited by electron cyclotron resonance (ECR) sputtering is investigated by an ECR ion stream with a mixture of chlorine and fluoride gases for use in the X-ray mask process. The addition of fluoride gas reduced the surface roughness of etched patterns caused by the crystal str...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000, Vol.39 (12S), p.6914
Hauptverfasser:	Tsuchizawa, Tai, Iriguchi, Hiroki, Takahashi, Chiharu, Shimada, Masaru, Uchiyama, Shingo, Oda, Masatoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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