Surface Structure on Ar + -Ion Irradiated Graphite by Scanning Probe Microscopy
The surface structure of a highly oriented pyrolytic graphite (HOPG), irradiated by Ar + ions with an ion energy of 0.5–1.0 keV at doses below 5×10 11 ions/cm 2 during annealing, was characterized by scanning probe microscopy. The ion-induced hillocks were observed by both scanning tunneling microsc...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000-06, Vol.39 (6S), p.3732 |
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container_title | Japanese Journal of Applied Physics |
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creator | An, Bai Fukuyama, Seiji Yokogawa, Kiyoshi Yoshimura, Masamichi |
description | The surface structure of a highly oriented pyrolytic graphite
(HOPG), irradiated by Ar
+
ions with an ion energy of
0.5–1.0 keV at doses below 5×10
11
ions/cm
2
during annealing, was characterized by scanning probe microscopy. The ion-induced hillocks
were observed by both scanning tunneling microscopy (STM) and atomic
force microscopy (AFM) after the ion irradiation, the heights of
which, measured by STM, were larger than that measured by AFM in the
tapping mode. The hillocks were recovered distinguishably by
annealing above 470 K. Almost 85% of the hillocks disappeared after
annealing at 1270 K and they disappeared completely after annealing
above 1770 K. The behavior of defects produced by ion-irradiation in
HOPG during annealing is discussed. |
doi_str_mv | 10.1143/JJAP.39.3732 |
format | Article |
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(HOPG), irradiated by Ar
+
ions with an ion energy of
0.5–1.0 keV at doses below 5×10
11
ions/cm
2
during annealing, was characterized by scanning probe microscopy. The ion-induced hillocks
were observed by both scanning tunneling microscopy (STM) and atomic
force microscopy (AFM) after the ion irradiation, the heights of
which, measured by STM, were larger than that measured by AFM in the
tapping mode. The hillocks were recovered distinguishably by
annealing above 470 K. Almost 85% of the hillocks disappeared after
annealing at 1270 K and they disappeared completely after annealing
above 1770 K. The behavior of defects produced by ion-irradiation in
HOPG during annealing is discussed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.39.3732</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2000-06, Vol.39 (6S), p.3732</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-b0b8f9bcdb4443524554abfea52898072ca8d0cb2ac6cf60619d7e7a308e5a043</citedby><cites>FETCH-LOGICAL-c381t-b0b8f9bcdb4443524554abfea52898072ca8d0cb2ac6cf60619d7e7a308e5a043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>An, Bai</creatorcontrib><creatorcontrib>Fukuyama, Seiji</creatorcontrib><creatorcontrib>Yokogawa, Kiyoshi</creatorcontrib><creatorcontrib>Yoshimura, Masamichi</creatorcontrib><title>Surface Structure on Ar + -Ion Irradiated Graphite by Scanning Probe Microscopy</title><title>Japanese Journal of Applied Physics</title><description>The surface structure of a highly oriented pyrolytic graphite
(HOPG), irradiated by Ar
+
ions with an ion energy of
0.5–1.0 keV at doses below 5×10
11
ions/cm
2
during annealing, was characterized by scanning probe microscopy. The ion-induced hillocks
were observed by both scanning tunneling microscopy (STM) and atomic
force microscopy (AFM) after the ion irradiation, the heights of
which, measured by STM, were larger than that measured by AFM in the
tapping mode. The hillocks were recovered distinguishably by
annealing above 470 K. Almost 85% of the hillocks disappeared after
annealing at 1270 K and they disappeared completely after annealing
above 1770 K. The behavior of defects produced by ion-irradiation in
HOPG during annealing is discussed.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAYRS0EEqGw8QDewcG_iTNGFZRWRa0UmK3Pjg1BkEROMuTt2wime-9yrnQQumc0ZUyKp92uPKaiSEUu-AVKmJA5kTRTlyihlDMiC86v0c0wfJ9npiRL0KGaYgDncTXGyY1T9LhrcRnxAybbc9vGCHUDo6_xJkL_1Ywe2xlXDtq2aT_xMXbW47fGxW5wXT_foqsAP4O_-88V-nh5fl-_kv1hs12Xe-KEZiOx1OpQWFdbKaVQXColwQYPiutC05w70DV1loPLXMhoxoo69zkIqr0CKsUKPf5xl-Mh-mD62PxCnA2jZpFhFhlGFGaRIU6UU1Gs</recordid><startdate>20000601</startdate><enddate>20000601</enddate><creator>An, Bai</creator><creator>Fukuyama, Seiji</creator><creator>Yokogawa, Kiyoshi</creator><creator>Yoshimura, Masamichi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000601</creationdate><title>Surface Structure on Ar + -Ion Irradiated Graphite by Scanning Probe Microscopy</title><author>An, Bai ; Fukuyama, Seiji ; Yokogawa, Kiyoshi ; Yoshimura, Masamichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-b0b8f9bcdb4443524554abfea52898072ca8d0cb2ac6cf60619d7e7a308e5a043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>An, Bai</creatorcontrib><creatorcontrib>Fukuyama, Seiji</creatorcontrib><creatorcontrib>Yokogawa, Kiyoshi</creatorcontrib><creatorcontrib>Yoshimura, Masamichi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>An, Bai</au><au>Fukuyama, Seiji</au><au>Yokogawa, Kiyoshi</au><au>Yoshimura, Masamichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface Structure on Ar + -Ion Irradiated Graphite by Scanning Probe Microscopy</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2000-06-01</date><risdate>2000</risdate><volume>39</volume><issue>6S</issue><spage>3732</spage><pages>3732-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The surface structure of a highly oriented pyrolytic graphite
(HOPG), irradiated by Ar
+
ions with an ion energy of
0.5–1.0 keV at doses below 5×10
11
ions/cm
2
during annealing, was characterized by scanning probe microscopy. The ion-induced hillocks
were observed by both scanning tunneling microscopy (STM) and atomic
force microscopy (AFM) after the ion irradiation, the heights of
which, measured by STM, were larger than that measured by AFM in the
tapping mode. The hillocks were recovered distinguishably by
annealing above 470 K. Almost 85% of the hillocks disappeared after
annealing at 1270 K and they disappeared completely after annealing
above 1770 K. The behavior of defects produced by ion-irradiation in
HOPG during annealing is discussed.</abstract><doi>10.1143/JJAP.39.3732</doi></addata></record> |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Surface Structure on Ar + -Ion Irradiated Graphite by Scanning Probe Microscopy |
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