Correlation of Nanostructural Heterogeneity and Light Induced Degradation in a-Si:H Solar Cells

The small angle X-ray scattering (SAXS) method was adopted to estimate the nanostructural heterogeneity in hydrogenated amorphous silicon (a-Si:H) materials deposited by rf plasma enhanced chemical vapor deposition (PECVD) process from silane-argon mixtures at different volume ratios. The performanc...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000-05, Vol.39 (5R), p.2530
Hauptverfasser: Das, Ujjwal Kumar, Rath, Jatindra Kumar, Williamson, Don L., Chaudhuri, Partha
Format: Artikel
Sprache:eng
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