Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate Complementary Metal Oxide Semiconductor for 0.1 µm Dynamic Random Access Memory Technology

We developed a dual polymetal (W/WNx/poly-Si) gate complementary metal oxide semiconductor (MOS) down to a 0.15 µm gate length. The short-channel effects are effectively suppressed and a saturation current of 300 µA/µm is obtained for nMOS and 110 µA/µm is observed for pMOS at a 0.15 µm gate length....

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000-04, Vol.39 (4S), p.1969
Hauptverfasser:	Kim, Yong–Hae, Chang, Sung–Keun, Kim, Seon–Soon, Choi, Jun–Gi, Lee, Sang–Hee, Hahn, Dae–Hee, Kim, Hyung–Duck
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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