Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect

A striking effect of piezoelectric electron confinement on transport properites has been observed for the first time in nitride double-heterostructures. The two-dimensional electron gas mobility has shown to be drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999, Vol.38 (7B), p.L799
Hauptverfasser:	Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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