Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation

Heavily boron-doped silicon single crystals have been grown successfully by the Czochralski (CZ) method. The limit of boron concentration in the silicon melt for dislocation-free silicon crystal growth and segregation with heavy boron doping were investigated. It was found that a dislocation-free si...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999-03, Vol.38 (3A), p.L223
Hauptverfasser:	Taishi, Toshinori, Huang, Xinming, Kubota, Masayoshi, Kajigaya, Tomio, Fukami, Tatsuo, Hoshikawa, Keigo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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