Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
Heavily boron-doped silicon single crystals have been grown successfully by the Czochralski (CZ) method. The limit of boron concentration in the silicon melt for dislocation-free silicon crystal growth and segregation with heavy boron doping were investigated. It was found that a dislocation-free si...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-03, Vol.38 (3A), p.L223 |
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| container_issue | 3A |
| container_start_page | L223 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 38 |
| creator | Taishi, Toshinori Huang, Xinming Kubota, Masayoshi Kajigaya, Tomio Fukami, Tatsuo Hoshikawa, Keigo |
| description | Heavily boron-doped silicon single crystals have been grown successfully by the
Czochralski (CZ) method. The limit of boron concentration in the silicon melt for
dislocation-free silicon crystal growth and segregation with heavy boron doping
were investigated. It was found that a dislocation-free silicon crystal could be
obtained even when the initial boron concentration in the silicon melt was up to
3.8×10
20
atoms/cm
3
with a solidified fraction of about 0.5. The lowest resistivity
of the dislocation-free B-doped silicon crystal was about 0.7 m Ω·cm. It is
confirmed that the equilibrium segregation coefficient of boron decreases from 0.8
with heavy boron doping. |
| doi_str_mv | 10.1143/JJAP.38.L223 |
| format | Article |
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Czochralski (CZ) method. The limit of boron concentration in the silicon melt for
dislocation-free silicon crystal growth and segregation with heavy boron doping
were investigated. It was found that a dislocation-free silicon crystal could be
obtained even when the initial boron concentration in the silicon melt was up to
3.8×10
20
atoms/cm
3
with a solidified fraction of about 0.5. The lowest resistivity
of the dislocation-free B-doped silicon crystal was about 0.7 m Ω·cm. It is
confirmed that the equilibrium segregation coefficient of boron decreases from 0.8
with heavy boron doping.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.L223</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-03, Vol.38 (3A), p.L223</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-b3e4ff0d9146aa649acb2ec2a870428373ecc7af1125c311fd8c5ffd20e015e03</citedby><cites>FETCH-LOGICAL-c381t-b3e4ff0d9146aa649acb2ec2a870428373ecc7af1125c311fd8c5ffd20e015e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Taishi, Toshinori</creatorcontrib><creatorcontrib>Huang, Xinming</creatorcontrib><creatorcontrib>Kubota, Masayoshi</creatorcontrib><creatorcontrib>Kajigaya, Tomio</creatorcontrib><creatorcontrib>Fukami, Tatsuo</creatorcontrib><creatorcontrib>Hoshikawa, Keigo</creatorcontrib><title>Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation</title><title>Japanese Journal of Applied Physics</title><description>Heavily boron-doped silicon single crystals have been grown successfully by the
Czochralski (CZ) method. The limit of boron concentration in the silicon melt for
dislocation-free silicon crystal growth and segregation with heavy boron doping
were investigated. It was found that a dislocation-free silicon crystal could be
obtained even when the initial boron concentration in the silicon melt was up to
3.8×10
20
atoms/cm
3
with a solidified fraction of about 0.5. The lowest resistivity
of the dislocation-free B-doped silicon crystal was about 0.7 m Ω·cm. It is
confirmed that the equilibrium segregation coefficient of boron decreases from 0.8
with heavy boron doping.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYRoMoWKd3_oD-AFPz5k2_vJudbo6CwvQ6ZGlSK7UZSVH6712ZV4cHHs7FIeQWWAIg8H67Xb4lWCQ153hGIkCRU8Gy9JxEjHGgouT8klyF8HWcWSogIquNUT9dP8WPzruBrtzBNPGu6zvthiOHtjdx5acwqj5ee_c7fj6crvHOtN60auzccE0urOqDufnngnw8P71XG1q_rl-qZU01FjDSPRphLWtKEJlSmSiV3nOjuSpyJniBORqtc2UBeKoRwDaFTq1tODMMUsNwQe5OXu1dCN5YefDdt_KTBCbnAnIuILGQcwH8AzKuTpU</recordid><startdate>19990301</startdate><enddate>19990301</enddate><creator>Taishi, Toshinori</creator><creator>Huang, Xinming</creator><creator>Kubota, Masayoshi</creator><creator>Kajigaya, Tomio</creator><creator>Fukami, Tatsuo</creator><creator>Hoshikawa, Keigo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19990301</creationdate><title>Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation</title><author>Taishi, Toshinori ; Huang, Xinming ; Kubota, Masayoshi ; Kajigaya, Tomio ; Fukami, Tatsuo ; Hoshikawa, Keigo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-b3e4ff0d9146aa649acb2ec2a870428373ecc7af1125c311fd8c5ffd20e015e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taishi, Toshinori</creatorcontrib><creatorcontrib>Huang, Xinming</creatorcontrib><creatorcontrib>Kubota, Masayoshi</creatorcontrib><creatorcontrib>Kajigaya, Tomio</creatorcontrib><creatorcontrib>Fukami, Tatsuo</creatorcontrib><creatorcontrib>Hoshikawa, Keigo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Taishi, Toshinori</au><au>Huang, Xinming</au><au>Kubota, Masayoshi</au><au>Kajigaya, Tomio</au><au>Fukami, Tatsuo</au><au>Hoshikawa, Keigo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-03-01</date><risdate>1999</risdate><volume>38</volume><issue>3A</issue><spage>L223</spage><pages>L223-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Heavily boron-doped silicon single crystals have been grown successfully by the
Czochralski (CZ) method. The limit of boron concentration in the silicon melt for
dislocation-free silicon crystal growth and segregation with heavy boron doping
were investigated. It was found that a dislocation-free silicon crystal could be
obtained even when the initial boron concentration in the silicon melt was up to
3.8×10
20
atoms/cm
3
with a solidified fraction of about 0.5. The lowest resistivity
of the dislocation-free B-doped silicon crystal was about 0.7 m Ω·cm. It is
confirmed that the equilibrium segregation coefficient of boron decreases from 0.8
with heavy boron doping.</abstract><doi>10.1143/JJAP.38.L223</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1999-03, Vol.38 (3A), p.L223 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_38_L223 |
| source | Institute of Physics Journals |
| title | Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation |
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