An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides
We have fabricated and investigated the fundamental electron transport properties of a two-terminal tunnel diode, which consisted of a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometer-scale oxides locally generated by using an atomi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-02, Vol.38 (2B), p.L160 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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