Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching
Low damage GaInAsP/InP narrow wire structures with vertical mesa shape were realized by CH 4 /H 2 -reactive ion etching followed by a slight wet chemical etching and an embedding growth by organo-metallic vapor phase epitaxy. By using this fabrication process, a threshold current density as low as 3...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-11, Vol.38 (11B), p.L1323, Article L1323 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 11B |
| container_start_page | L1323 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 38 |
| creator | Nobuhiro Nunoya, Nobuhiro Nunoya Madoka Nakamura, Madoka Nakamura Hideo Yasumoto, Hideo Yasumoto Shigeo Tamura, Shigeo Tamura Shigehisa Arai, Shigehisa Arai |
| description | Low damage GaInAsP/InP narrow wire structures with vertical mesa shape were realized by CH
4
/H
2
-reactive ion etching followed by a slight wet chemical etching and an embedding growth by organo-metallic vapor phase epitaxy.
By using this fabrication process, a threshold current density as low as 330 A/cm
2
(66 A/cm
2
/well, @
L
=860 µm) was obtained for 1.55 µm wavelength five-quantum-well distributed feedback (DFB) laser consisting of periodic wire active regions. To our knowledge this is the lowest value reported for 1.55 µm GaInAsP/InP DFB lasers fabricated by the dry etching process. |
| doi_str_mv | 10.1143/JJAP.38.L1323 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_38_L1323</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_38_L1323</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1488-ec201e2a94f437febd870b07b00bf17a2d0e8147d23de339db7689f6b61f73cc3</originalsourceid><addsrcrecordid>eNp1kMtKw0AUhgdRsFaX7ucF0s6tuSxDbW1KwCAVl2EuJ81oTWRmtHTvg5taV4Krw8_5_gPnQ-iWkgmlgk_X67ya8HRSUs74GRpRLpJIkHh2jkaEMBqJjLFLdOX9yxDjmaAj9FX2e7xpHfi23xl8L4su99W06Cp8Z31wVn0EMHgJYJTUr7iUHpzHextaXIGzvbEaP1sHONfBfgJ-hK3tO4-XUjmr5bGsDni-wgJPV5gNe3kCi77Di6Bb222v0UUjdx5ufucYPS0Xm_kqKh_ui3leRpqKNI1AM0KByUw0gicNKJMmRJFEEaIamkhmCKRUJIZxA5xnRiVxmjWximmTcK35GEWnu9r13jto6ndn36Q71JTUR4X1UWHN0_pH4cDzP7y2QYbhv-Ck3f3T-gai63SJ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Nobuhiro Nunoya, Nobuhiro Nunoya ; Madoka Nakamura, Madoka Nakamura ; Hideo Yasumoto, Hideo Yasumoto ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</creator><creatorcontrib>Nobuhiro Nunoya, Nobuhiro Nunoya ; Madoka Nakamura, Madoka Nakamura ; Hideo Yasumoto, Hideo Yasumoto ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</creatorcontrib><description>Low damage GaInAsP/InP narrow wire structures with vertical mesa shape were realized by CH
4
/H
2
-reactive ion etching followed by a slight wet chemical etching and an embedding growth by organo-metallic vapor phase epitaxy.
By using this fabrication process, a threshold current density as low as 330 A/cm
2
(66 A/cm
2
/well, @
L
=860 µm) was obtained for 1.55 µm wavelength five-quantum-well distributed feedback (DFB) laser consisting of periodic wire active regions. To our knowledge this is the lowest value reported for 1.55 µm GaInAsP/InP DFB lasers fabricated by the dry etching process.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.L1323</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-11, Vol.38 (11B), p.L1323, Article L1323</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1488-ec201e2a94f437febd870b07b00bf17a2d0e8147d23de339db7689f6b61f73cc3</citedby><cites>FETCH-LOGICAL-c1488-ec201e2a94f437febd870b07b00bf17a2d0e8147d23de339db7689f6b61f73cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Nobuhiro Nunoya, Nobuhiro Nunoya</creatorcontrib><creatorcontrib>Madoka Nakamura, Madoka Nakamura</creatorcontrib><creatorcontrib>Hideo Yasumoto, Hideo Yasumoto</creatorcontrib><creatorcontrib>Shigeo Tamura, Shigeo Tamura</creatorcontrib><creatorcontrib>Shigehisa Arai, Shigehisa Arai</creatorcontrib><title>Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching</title><title>Japanese Journal of Applied Physics</title><description>Low damage GaInAsP/InP narrow wire structures with vertical mesa shape were realized by CH
4
/H
2
-reactive ion etching followed by a slight wet chemical etching and an embedding growth by organo-metallic vapor phase epitaxy.
By using this fabrication process, a threshold current density as low as 330 A/cm
2
(66 A/cm
2
/well, @
L
=860 µm) was obtained for 1.55 µm wavelength five-quantum-well distributed feedback (DFB) laser consisting of periodic wire active regions. To our knowledge this is the lowest value reported for 1.55 µm GaInAsP/InP DFB lasers fabricated by the dry etching process.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKw0AUhgdRsFaX7ucF0s6tuSxDbW1KwCAVl2EuJ81oTWRmtHTvg5taV4Krw8_5_gPnQ-iWkgmlgk_X67ya8HRSUs74GRpRLpJIkHh2jkaEMBqJjLFLdOX9yxDjmaAj9FX2e7xpHfi23xl8L4su99W06Cp8Z31wVn0EMHgJYJTUr7iUHpzHextaXIGzvbEaP1sHONfBfgJ-hK3tO4-XUjmr5bGsDni-wgJPV5gNe3kCi77Di6Bb222v0UUjdx5ufucYPS0Xm_kqKh_ui3leRpqKNI1AM0KByUw0gicNKJMmRJFEEaIamkhmCKRUJIZxA5xnRiVxmjWximmTcK35GEWnu9r13jto6ndn36Q71JTUR4X1UWHN0_pH4cDzP7y2QYbhv-Ck3f3T-gai63SJ</recordid><startdate>19991101</startdate><enddate>19991101</enddate><creator>Nobuhiro Nunoya, Nobuhiro Nunoya</creator><creator>Madoka Nakamura, Madoka Nakamura</creator><creator>Hideo Yasumoto, Hideo Yasumoto</creator><creator>Shigeo Tamura, Shigeo Tamura</creator><creator>Shigehisa Arai, Shigehisa Arai</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991101</creationdate><title>Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching</title><author>Nobuhiro Nunoya, Nobuhiro Nunoya ; Madoka Nakamura, Madoka Nakamura ; Hideo Yasumoto, Hideo Yasumoto ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1488-ec201e2a94f437febd870b07b00bf17a2d0e8147d23de339db7689f6b61f73cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nobuhiro Nunoya, Nobuhiro Nunoya</creatorcontrib><creatorcontrib>Madoka Nakamura, Madoka Nakamura</creatorcontrib><creatorcontrib>Hideo Yasumoto, Hideo Yasumoto</creatorcontrib><creatorcontrib>Shigeo Tamura, Shigeo Tamura</creatorcontrib><creatorcontrib>Shigehisa Arai, Shigehisa Arai</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nobuhiro Nunoya, Nobuhiro Nunoya</au><au>Madoka Nakamura, Madoka Nakamura</au><au>Hideo Yasumoto, Hideo Yasumoto</au><au>Shigeo Tamura, Shigeo Tamura</au><au>Shigehisa Arai, Shigehisa Arai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-11-01</date><risdate>1999</risdate><volume>38</volume><issue>11B</issue><spage>L1323</spage><pages>L1323-</pages><artnum>L1323</artnum><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Low damage GaInAsP/InP narrow wire structures with vertical mesa shape were realized by CH
4
/H
2
-reactive ion etching followed by a slight wet chemical etching and an embedding growth by organo-metallic vapor phase epitaxy.
By using this fabrication process, a threshold current density as low as 330 A/cm
2
(66 A/cm
2
/well, @
L
=860 µm) was obtained for 1.55 µm wavelength five-quantum-well distributed feedback (DFB) laser consisting of periodic wire active regions. To our knowledge this is the lowest value reported for 1.55 µm GaInAsP/InP DFB lasers fabricated by the dry etching process.</abstract><doi>10.1143/JJAP.38.L1323</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1999-11, Vol.38 (11B), p.L1323, Article L1323 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_38_L1323 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4 /H 2 Reactive Ion Etching |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T12%3A44%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20Threshold%20GaInAsP/InP%20Distributed%20Feedback%20Lasers%20with%20Periodic%20Wire%20Active%20Regions%20Fabricated%20by%20CH%204%20/H%202%20Reactive%20Ion%20Etching&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Nobuhiro%20Nunoya,%20Nobuhiro%20Nunoya&rft.date=1999-11-01&rft.volume=38&rft.issue=11B&rft.spage=L1323&rft.pages=L1323-&rft.artnum=L1323&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.38.L1323&rft_dat=%3Ccrossref%3E10_1143_JJAP_38_L1323%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |