Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure

Semi-insulating (SI) InP has been industrially produced by doping Fe atoms as deep acceptors. Fe concentrations in InP are, however, largely varied from top to tail along the crystal growth axis due to impurity segregation. In the present work, we have examined the possibility of vapor-phase Fe dopi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 1999-02, Vol.38 (2S), p.985
Hauptverfasser:	Uchida, Masayuki, Asahi, Toshiaki, Kainosho, Keiji, Matsuda, Yuko, Oda, Osamu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!