Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment

The effect of selenium sulphide (SeS 2 ) treatment for GaAs grown on Si has been studied. The surface and bulk properties such as the photoluminscence intensity and minority carrier life-time have been significantly increased. The PL intensity showed a two fold and four fold increase for the as-pass...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999-12, Vol.38 (12R), p.6587
Hauptverfasser:	Arokiaraj, Jesudoss, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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