Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment
The effect of selenium sulphide (SeS 2 ) treatment for GaAs grown on Si has been studied. The surface and bulk properties such as the photoluminscence intensity and minority carrier life-time have been significantly increased. The PL intensity showed a two fold and four fold increase for the as-pass...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-12, Vol.38 (12R), p.6587 |
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| container_issue | 12R |
| container_start_page | 6587 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 38 |
| creator | Arokiaraj, Jesudoss Soga, Tetsuo Jimbo, Takashi Umeno, Masayoshi |
| description | The effect of selenium sulphide (SeS
2
) treatment for GaAs grown
on Si has been studied. The surface and bulk properties such as the
photoluminscence intensity and minority carrier life-time have been
significantly increased. The PL intensity showed a two fold and four
fold increase for the as-passivated, passivated and annealed
samples. It is proposed that the passivation on the surface occurs by
means of sulphur and selenium atoms. The bulk passivation is by means
of diffusion of Se into the bulk of the epilayer. Additional steps of
annealing increased the minority carrier life time thereby reducing
the recombination velocity and also indiffusion of Se helps to
passivate the buried defects such as As
Ga
in the double
heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and
selenides reside on the outermost surface and only gallium based
selenides are in the bulk of the GaAs layer. |
| doi_str_mv | 10.1143/JJAP.38.6587 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_38_6587</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_38_6587</sourcerecordid><originalsourceid>FETCH-LOGICAL-c807-b3ff89e633c5c33b6ab429f398d99b955ed3b9aa03c90dfeb519bab84baf2d163</originalsourceid><addsrcrecordid>eNot0MFOwzAQBFALgUQo3PiA_QBS7Kyd2MdSQaGqRKWUc7R2bBRoE2SnoP49reA0mjnM4TF2K_hUCIn3y-VsPUU9LZWuzlgmUFa55KU6ZxnnhcilKYpLdpXSx7GWSoqMvdX7GMh5oL6Fh_32E9aUUvdNYzf04EPwboQhwIJmCd7j8NPDca87qPc2jZFGn8AeoPY1FLCJnsad78drdhFom_zNf07Y5ulxM3_OV6-Ll_lslTvNq9xiCNr4EtEph2hLsrIwAY1ujbFGKd-iNUQcneFt8FYJY8lqaSkUrShxwu7-bl0cUoo-NF-x21E8NII3J5HmJNKgbk4i-AuA9lPY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Arokiaraj, Jesudoss ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi</creator><creatorcontrib>Arokiaraj, Jesudoss ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi</creatorcontrib><description>The effect of selenium sulphide (SeS
2
) treatment for GaAs grown
on Si has been studied. The surface and bulk properties such as the
photoluminscence intensity and minority carrier life-time have been
significantly increased. The PL intensity showed a two fold and four
fold increase for the as-passivated, passivated and annealed
samples. It is proposed that the passivation on the surface occurs by
means of sulphur and selenium atoms. The bulk passivation is by means
of diffusion of Se into the bulk of the epilayer. Additional steps of
annealing increased the minority carrier life time thereby reducing
the recombination velocity and also indiffusion of Se helps to
passivate the buried defects such as As
Ga
in the double
heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and
selenides reside on the outermost surface and only gallium based
selenides are in the bulk of the GaAs layer.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.6587</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6587</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c807-b3ff89e633c5c33b6ab429f398d99b955ed3b9aa03c90dfeb519bab84baf2d163</citedby><cites>FETCH-LOGICAL-c807-b3ff89e633c5c33b6ab429f398d99b955ed3b9aa03c90dfeb519bab84baf2d163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Arokiaraj, Jesudoss</creatorcontrib><creatorcontrib>Soga, Tetsuo</creatorcontrib><creatorcontrib>Jimbo, Takashi</creatorcontrib><creatorcontrib>Umeno, Masayoshi</creatorcontrib><title>Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment</title><title>Japanese Journal of Applied Physics</title><description>The effect of selenium sulphide (SeS
2
) treatment for GaAs grown
on Si has been studied. The surface and bulk properties such as the
photoluminscence intensity and minority carrier life-time have been
significantly increased. The PL intensity showed a two fold and four
fold increase for the as-passivated, passivated and annealed
samples. It is proposed that the passivation on the surface occurs by
means of sulphur and selenium atoms. The bulk passivation is by means
of diffusion of Se into the bulk of the epilayer. Additional steps of
annealing increased the minority carrier life time thereby reducing
the recombination velocity and also indiffusion of Se helps to
passivate the buried defects such as As
Ga
in the double
heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and
selenides reside on the outermost surface and only gallium based
selenides are in the bulk of the GaAs layer.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNot0MFOwzAQBFALgUQo3PiA_QBS7Kyd2MdSQaGqRKWUc7R2bBRoE2SnoP49reA0mjnM4TF2K_hUCIn3y-VsPUU9LZWuzlgmUFa55KU6ZxnnhcilKYpLdpXSx7GWSoqMvdX7GMh5oL6Fh_32E9aUUvdNYzf04EPwboQhwIJmCd7j8NPDca87qPc2jZFGn8AeoPY1FLCJnsad78drdhFom_zNf07Y5ulxM3_OV6-Ll_lslTvNq9xiCNr4EtEph2hLsrIwAY1ujbFGKd-iNUQcneFt8FYJY8lqaSkUrShxwu7-bl0cUoo-NF-x21E8NII3J5HmJNKgbk4i-AuA9lPY</recordid><startdate>19991201</startdate><enddate>19991201</enddate><creator>Arokiaraj, Jesudoss</creator><creator>Soga, Tetsuo</creator><creator>Jimbo, Takashi</creator><creator>Umeno, Masayoshi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991201</creationdate><title>Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment</title><author>Arokiaraj, Jesudoss ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c807-b3ff89e633c5c33b6ab429f398d99b955ed3b9aa03c90dfeb519bab84baf2d163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arokiaraj, Jesudoss</creatorcontrib><creatorcontrib>Soga, Tetsuo</creatorcontrib><creatorcontrib>Jimbo, Takashi</creatorcontrib><creatorcontrib>Umeno, Masayoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arokiaraj, Jesudoss</au><au>Soga, Tetsuo</au><au>Jimbo, Takashi</au><au>Umeno, Masayoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-12-01</date><risdate>1999</risdate><volume>38</volume><issue>12R</issue><spage>6587</spage><pages>6587-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The effect of selenium sulphide (SeS
2
) treatment for GaAs grown
on Si has been studied. The surface and bulk properties such as the
photoluminscence intensity and minority carrier life-time have been
significantly increased. The PL intensity showed a two fold and four
fold increase for the as-passivated, passivated and annealed
samples. It is proposed that the passivation on the surface occurs by
means of sulphur and selenium atoms. The bulk passivation is by means
of diffusion of Se into the bulk of the epilayer. Additional steps of
annealing increased the minority carrier life time thereby reducing
the recombination velocity and also indiffusion of Se helps to
passivate the buried defects such as As
Ga
in the double
heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and
selenides reside on the outermost surface and only gallium based
selenides are in the bulk of the GaAs layer.</abstract><doi>10.1143/JJAP.38.6587</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6587 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_38_6587 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS 2 Treatment |
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