Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se 2 -Based Modules by RF/DC/DC Multiple Magnetron Sputtering
In this report, a comparative study of physical properties of the multilayered ZnO:Al films prepared by a combination of RF and DC magnetron sputtering is presented. It has been found that a RF/DC/DC trilayered system consisting of a thin RF-sputtered ZnO:Al bottom layer with two identical DC-sputte...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-11, Vol.38 (11R), p.6213 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Cooray, Nawalage F. Kushiya, Katsumi Fujimaki, Atsushi Okumura, Daisuke Sato, Masao Ooshita, Mineo Yamase, Osamu |
| description | In this report, a comparative study of physical properties of
the multilayered ZnO:Al films prepared by a combination of RF and DC
magnetron sputtering is presented. It has been found that a RF/DC/DC
trilayered system consisting of a thin RF-sputtered ZnO:Al bottom
layer with two identical DC-sputtered ZnO:Al layers deposited with a
low DC current improved the physical properties when compared to those
of the ZnO film of the baseline condition, [DC(2.0 A, thickness of
about 6500 Å) monolayer]. The sheet resistance and transmittance
of the highest quality ZnO film deposited with the
RF(600 Å)/DC(1.2 A, thickness of 4200 Å)/DC(1.2 A, thickness
of 4200 Å) sputtering condition were found to be
10 Ω/sq and 85% in the wavelength range of 350–1400 nm,
respectively. With the newly improved transparent-conductive-oxide
(TCO) window, Cu(InGa)Se
2
(CIGS) modules (aperture area = 50 cm
2
)
have been fabricated, and marked improvement in fill
factor (FF) (+8%) and efficiency (+12%) have been obtained
when compared to those of the ZnO:Al deposited under the baseline
condition. The average efficiency of the above CIGS modules was found
to be 11.1%. |
| doi_str_mv | 10.1143/JJAP.38.6213 |
| format | Article |
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the multilayered ZnO:Al films prepared by a combination of RF and DC
magnetron sputtering is presented. It has been found that a RF/DC/DC
trilayered system consisting of a thin RF-sputtered ZnO:Al bottom
layer with two identical DC-sputtered ZnO:Al layers deposited with a
low DC current improved the physical properties when compared to those
of the ZnO film of the baseline condition, [DC(2.0 A, thickness of
about 6500 Å) monolayer]. The sheet resistance and transmittance
of the highest quality ZnO film deposited with the
RF(600 Å)/DC(1.2 A, thickness of 4200 Å)/DC(1.2 A, thickness
of 4200 Å) sputtering condition were found to be
10 Ω/sq and 85% in the wavelength range of 350–1400 nm,
respectively. With the newly improved transparent-conductive-oxide
(TCO) window, Cu(InGa)Se
2
(CIGS) modules (aperture area = 50 cm
2
)
have been fabricated, and marked improvement in fill
factor (FF) (+8%) and efficiency (+12%) have been obtained
when compared to those of the ZnO:Al deposited under the baseline
condition. The average efficiency of the above CIGS modules was found
to be 11.1%.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.6213</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-11, Vol.38 (11R), p.6213</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c165t-40f5dbf5c0ca12a73e07246fae743b284892317761fc8ee211f76e99f8eb14d33</citedby><cites>FETCH-LOGICAL-c165t-40f5dbf5c0ca12a73e07246fae743b284892317761fc8ee211f76e99f8eb14d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Cooray, Nawalage F.</creatorcontrib><creatorcontrib>Kushiya, Katsumi</creatorcontrib><creatorcontrib>Fujimaki, Atsushi</creatorcontrib><creatorcontrib>Okumura, Daisuke</creatorcontrib><creatorcontrib>Sato, Masao</creatorcontrib><creatorcontrib>Ooshita, Mineo</creatorcontrib><creatorcontrib>Yamase, Osamu</creatorcontrib><title>Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se 2 -Based Modules by RF/DC/DC Multiple Magnetron Sputtering</title><title>Japanese Journal of Applied Physics</title><description>In this report, a comparative study of physical properties of
the multilayered ZnO:Al films prepared by a combination of RF and DC
magnetron sputtering is presented. It has been found that a RF/DC/DC
trilayered system consisting of a thin RF-sputtered ZnO:Al bottom
layer with two identical DC-sputtered ZnO:Al layers deposited with a
low DC current improved the physical properties when compared to those
of the ZnO film of the baseline condition, [DC(2.0 A, thickness of
about 6500 Å) monolayer]. The sheet resistance and transmittance
of the highest quality ZnO film deposited with the
RF(600 Å)/DC(1.2 A, thickness of 4200 Å)/DC(1.2 A, thickness
of 4200 Å) sputtering condition were found to be
10 Ω/sq and 85% in the wavelength range of 350–1400 nm,
respectively. With the newly improved transparent-conductive-oxide
(TCO) window, Cu(InGa)Se
2
(CIGS) modules (aperture area = 50 cm
2
)
have been fabricated, and marked improvement in fill
factor (FF) (+8%) and efficiency (+12%) have been obtained
when compared to those of the ZnO:Al deposited under the baseline
condition. The average efficiency of the above CIGS modules was found
to be 11.1%.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkEFLw0AQhRdRsFZv_oA9KrhtZneTTY4x2trSUrGK4CVsktkSSZOwmyD14l83RWFg5h3ePN5HyDV4EwAppstl_DwR4STgIE7ICIRUTHqBf0pGnseByYjzc3Lh3OcgA1_CiPxs2q7cl9-6K5uaNobGFSuaFgv6UW_oe1kXzRdd6QNaR01jh9PukMUWNU36m0U917dbpJyye-0G07op-godzQ70ZTZ9SIah677qyrZCuta7Gjs75GzbvuvQlvXukpwZXTm8-t9j8jZ7fE2e2GozXyTxiuUQ-N3QwvhFZvzcyzVwrQR6isvAaFRSZDyUYcQFKBWAyUNEDmBUgFFkQsxAFkKMyd3f39w2zlk0aWvLvbaHFLz0CC89wktFmB7hiV9ommDT</recordid><startdate>19991101</startdate><enddate>19991101</enddate><creator>Cooray, Nawalage F.</creator><creator>Kushiya, Katsumi</creator><creator>Fujimaki, Atsushi</creator><creator>Okumura, Daisuke</creator><creator>Sato, Masao</creator><creator>Ooshita, Mineo</creator><creator>Yamase, Osamu</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991101</creationdate><title>Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se 2 -Based Modules by RF/DC/DC Multiple Magnetron Sputtering</title><author>Cooray, Nawalage F. ; Kushiya, Katsumi ; Fujimaki, Atsushi ; Okumura, Daisuke ; Sato, Masao ; Ooshita, Mineo ; Yamase, Osamu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c165t-40f5dbf5c0ca12a73e07246fae743b284892317761fc8ee211f76e99f8eb14d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cooray, Nawalage F.</creatorcontrib><creatorcontrib>Kushiya, Katsumi</creatorcontrib><creatorcontrib>Fujimaki, Atsushi</creatorcontrib><creatorcontrib>Okumura, Daisuke</creatorcontrib><creatorcontrib>Sato, Masao</creatorcontrib><creatorcontrib>Ooshita, Mineo</creatorcontrib><creatorcontrib>Yamase, Osamu</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cooray, Nawalage F.</au><au>Kushiya, Katsumi</au><au>Fujimaki, Atsushi</au><au>Okumura, Daisuke</au><au>Sato, Masao</au><au>Ooshita, Mineo</au><au>Yamase, Osamu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se 2 -Based Modules by RF/DC/DC Multiple Magnetron Sputtering</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-11-01</date><risdate>1999</risdate><volume>38</volume><issue>11R</issue><spage>6213</spage><pages>6213-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>In this report, a comparative study of physical properties of
the multilayered ZnO:Al films prepared by a combination of RF and DC
magnetron sputtering is presented. It has been found that a RF/DC/DC
trilayered system consisting of a thin RF-sputtered ZnO:Al bottom
layer with two identical DC-sputtered ZnO:Al layers deposited with a
low DC current improved the physical properties when compared to those
of the ZnO film of the baseline condition, [DC(2.0 A, thickness of
about 6500 Å) monolayer]. The sheet resistance and transmittance
of the highest quality ZnO film deposited with the
RF(600 Å)/DC(1.2 A, thickness of 4200 Å)/DC(1.2 A, thickness
of 4200 Å) sputtering condition were found to be
10 Ω/sq and 85% in the wavelength range of 350–1400 nm,
respectively. With the newly improved transparent-conductive-oxide
(TCO) window, Cu(InGa)Se
2
(CIGS) modules (aperture area = 50 cm
2
)
have been fabricated, and marked improvement in fill
factor (FF) (+8%) and efficiency (+12%) have been obtained
when compared to those of the ZnO:Al deposited under the baseline
condition. The average efficiency of the above CIGS modules was found
to be 11.1%.</abstract><doi>10.1143/JJAP.38.6213</doi></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se 2 -Based Modules by RF/DC/DC Multiple Magnetron Sputtering |
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