Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and Their Transport Properties

Micro- and crystal structures of polycrystalline silicon ( poly -Si) films fabricated by low temperature (≤360°C) plasma enhanced chemical vapor deposition (PECVD) were examined. Crystal orientation could be controlled by varying the source gas ratio SiF 4 /H 2 . (220) oriented films were obtained a...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999, Vol.38 (10R), p.5750
Hauptverfasser:	Kamiya, Toshio, Nakahata, Kouichi, Ro, Kazuyoshi, Fortmann, Charles M., Shimizu, Isamu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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