Highly Selective Etching of Poly-Si by Time Modulation Bias

Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the dut...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999-09, Vol.38 (9R), p.5292
Hauptverfasser:	Ono, Tetsuo, Miyazaki, Hiroshi, Mizutani, Tatsumi, Goto, Yasushi, Kure, Tokuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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