Highly Selective Etching of Poly-Si by Time Modulation Bias

Highly Selective Etching of Poly-Si by Time Modulation Bias

Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the dut...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1999-09, Vol.38 (9R), p.5292
Hauptverfasser: Ono, Tetsuo, Miyazaki, Hiroshi, Mizutani, Tatsumi, Goto, Yasushi, Kure, Tokuo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 9R
container_start_page 5292
container_title Japanese Journal of Applied Physics
container_volume 38
creator Ono, Tetsuo
Miyazaki, Hiroshi
Mizutani, Tatsumi
Goto, Yasushi
Kure, Tokuo
description Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the duty ratio of the pulse. The selectivity of poly-Si to SiO 2 is about 1.5-fold that of continuous wave bias at a poly-Si etch rate of 100 nm/min. The SiO 2 etch rate is suppressed and the selectivity increased, this may be caused by the selective deposition of reaction products including oxygen on the SiO 2 surface during off periods of RF bias.
doi_str_mv 10.1143/JJAP.38.5292
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_38_5292</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_38_5292</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-d65997e1004270097d3a0ca1d5cdad04afc4dfea3df8c66a8a00d343c4be85c83</originalsourceid><addsrcrecordid>eNotz91KwzAYxvEgCtbpmReQCzD1zWdTPJpjOsfEweZxyPKxRbpVmir07rXo0cP_5IEfQrcUSkoFv18up-uS61Kymp2hgnJREQFKnqMCgFEiasYu0VXOH7-ppKAFelik_aEZ8CY0wfXpO-B57w7ptMdtxOu2Gcgm4d2At-kY8Gvrvxrbp_aEH5PN1-gi2iaHm_-doPen-Xa2IKu355fZdEUc17QnXsm6rgIFEKwCqCvPLThLvXTeehA2OuFjsNxH7ZSy2gJ4LrgTu6Cl03yC7v5-Xdfm3IVoPrt0tN1gKJgRbka44dqMcP4Djw1Kxg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Highly Selective Etching of Poly-Si by Time Modulation Bias</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ono, Tetsuo ; Miyazaki, Hiroshi ; Mizutani, Tatsumi ; Goto, Yasushi ; Kure, Tokuo</creator><creatorcontrib>Ono, Tetsuo ; Miyazaki, Hiroshi ; Mizutani, Tatsumi ; Goto, Yasushi ; Kure, Tokuo</creatorcontrib><description>Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the duty ratio of the pulse. The selectivity of poly-Si to SiO 2 is about 1.5-fold that of continuous wave bias at a poly-Si etch rate of 100 nm/min. The SiO 2 etch rate is suppressed and the selectivity increased, this may be caused by the selective deposition of reaction products including oxygen on the SiO 2 surface during off periods of RF bias.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.5292</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-09, Vol.38 (9R), p.5292</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-d65997e1004270097d3a0ca1d5cdad04afc4dfea3df8c66a8a00d343c4be85c83</citedby><cites>FETCH-LOGICAL-c381t-d65997e1004270097d3a0ca1d5cdad04afc4dfea3df8c66a8a00d343c4be85c83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ono, Tetsuo</creatorcontrib><creatorcontrib>Miyazaki, Hiroshi</creatorcontrib><creatorcontrib>Mizutani, Tatsumi</creatorcontrib><creatorcontrib>Goto, Yasushi</creatorcontrib><creatorcontrib>Kure, Tokuo</creatorcontrib><title>Highly Selective Etching of Poly-Si by Time Modulation Bias</title><title>Japanese Journal of Applied Physics</title><description>Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the duty ratio of the pulse. The selectivity of poly-Si to SiO 2 is about 1.5-fold that of continuous wave bias at a poly-Si etch rate of 100 nm/min. The SiO 2 etch rate is suppressed and the selectivity increased, this may be caused by the selective deposition of reaction products including oxygen on the SiO 2 surface during off periods of RF bias.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotz91KwzAYxvEgCtbpmReQCzD1zWdTPJpjOsfEweZxyPKxRbpVmir07rXo0cP_5IEfQrcUSkoFv18up-uS61Kymp2hgnJREQFKnqMCgFEiasYu0VXOH7-ppKAFelik_aEZ8CY0wfXpO-B57w7ptMdtxOu2Gcgm4d2At-kY8Gvrvxrbp_aEH5PN1-gi2iaHm_-doPen-Xa2IKu355fZdEUc17QnXsm6rgIFEKwCqCvPLThLvXTeehA2OuFjsNxH7ZSy2gJ4LrgTu6Cl03yC7v5-Xdfm3IVoPrt0tN1gKJgRbka44dqMcP4Djw1Kxg</recordid><startdate>19990901</startdate><enddate>19990901</enddate><creator>Ono, Tetsuo</creator><creator>Miyazaki, Hiroshi</creator><creator>Mizutani, Tatsumi</creator><creator>Goto, Yasushi</creator><creator>Kure, Tokuo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19990901</creationdate><title>Highly Selective Etching of Poly-Si by Time Modulation Bias</title><author>Ono, Tetsuo ; Miyazaki, Hiroshi ; Mizutani, Tatsumi ; Goto, Yasushi ; Kure, Tokuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-d65997e1004270097d3a0ca1d5cdad04afc4dfea3df8c66a8a00d343c4be85c83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ono, Tetsuo</creatorcontrib><creatorcontrib>Miyazaki, Hiroshi</creatorcontrib><creatorcontrib>Mizutani, Tatsumi</creatorcontrib><creatorcontrib>Goto, Yasushi</creatorcontrib><creatorcontrib>Kure, Tokuo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ono, Tetsuo</au><au>Miyazaki, Hiroshi</au><au>Mizutani, Tatsumi</au><au>Goto, Yasushi</au><au>Kure, Tokuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Selective Etching of Poly-Si by Time Modulation Bias</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-09-01</date><risdate>1999</risdate><volume>38</volume><issue>9R</issue><spage>5292</spage><pages>5292-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Highly selective etching of poly-Si is possible by time modulation (TM) bias. Radio frequency (RF) bias applied to a substrate is pulse modulated. The energy of ions impinging on the wafer is varied by the peak-to-peak voltage of RF bias. The average flux of accelerated ions is controlled by the duty ratio of the pulse. The selectivity of poly-Si to SiO 2 is about 1.5-fold that of continuous wave bias at a poly-Si etch rate of 100 nm/min. The SiO 2 etch rate is suppressed and the selectivity increased, this may be caused by the selective deposition of reaction products including oxygen on the SiO 2 surface during off periods of RF bias.</abstract><doi>10.1143/JJAP.38.5292</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1999-09, Vol.38 (9R), p.5292
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_38_5292
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Highly Selective Etching of Poly-Si by Time Modulation Bias
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T18%3A10%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20Selective%20Etching%20of%20Poly-Si%20by%20Time%20Modulation%20Bias&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ono,%20Tetsuo&rft.date=1999-09-01&rft.volume=38&rft.issue=9R&rft.spage=5292&rft.pages=5292-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.38.5292&rft_dat=%3Ccrossref%3E10_1143_JJAP_38_5292%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true