High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
B-doped ZnO films deposited by the photo-induced metalorganic chemical vapor deposition (photo-MOCVD) method were applied to p-i-n single junction amorphous silicon (a-Si) solar cells as front contacts. The thickness and the doping level of the p-layer were optimized in order to increase the open-ci...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999, Vol.38 (9R), p.4983 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Sang, Baosheng Dairiki, Koji Yamada, Akira Konagai, Makoto |
| description | B-doped ZnO films deposited by the photo-induced metalorganic chemical vapor
deposition (photo-MOCVD) method were applied to p-i-n single junction amorphous silicon (a-Si) solar cells as front contacts. The thickness and the doping level of the p-layer were optimized in order to increase the open-circuit voltage (
V
oc
) of the
fabricated a-Si solar cells. As a result, a stabilized conversion efficiency of 8.7% (
V
oc
: 0.926 V,
J
sc
: 14.6 mA/cm
2
, FF: 0.646) was achieved under AM 1.5 (100 mW/cm
2
)
illumination. Furthermore, the electrical properties of ZnO films were improved by
employing an atomic layer deposition (ALD) technique instead of the conventional
MOCVD method, and a lower resistivity of 5×10
-4
Ωcm was achieved. It was also
found that the stability of the electrical properties of ZnO films was improved by the
ALD technique. The performance of the a-Si solar cells was further improved by
applying the obtained high-quality ZnO films. |
| doi_str_mv | 10.1143/JJAP.38.4983 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_38_4983</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_38_4983</sourcerecordid><originalsourceid>FETCH-LOGICAL-c341t-5da13a686f0221a3f84c1d29ae6d8e0988520c4a9b88db81a4677d3355f64f573</originalsourceid><addsrcrecordid>eNot0E9LwzAABfAgCtbpzQ-QD2Bq_jc9jrI_jsGE6cVLyNLERrpmJBXZt3dFL-_xLu_wA-CR4JIQzp43m_lryVTJa8WuQEEYrxDHUlyDAmNKEK8pvQV3OX9dphScFGC1Dp8dWngfbHCDPcP5MaZTF78z3Ic-2DjAfexNgo3r-wx_wtjBj2EHTYbLFIcRNpcwdrwHN9702T389wy8LxdvzRptd6uXZr5FlnEyItEawoxU0mNKiWFecUtaWhsnW-VwrZSg2HJTH5RqD4oYLquqZUwIL7kXFZuBp79fm2LOyXl9SuFo0lkTrCcEPSFopvSEwH4BsYVOPQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Sang, Baosheng ; Dairiki, Koji ; Yamada, Akira ; Konagai, Makoto</creator><creatorcontrib>Sang, Baosheng ; Dairiki, Koji ; Yamada, Akira ; Konagai, Makoto</creatorcontrib><description>B-doped ZnO films deposited by the photo-induced metalorganic chemical vapor
deposition (photo-MOCVD) method were applied to p-i-n single junction amorphous silicon (a-Si) solar cells as front contacts. The thickness and the doping level of the p-layer were optimized in order to increase the open-circuit voltage (
V
oc
) of the
fabricated a-Si solar cells. As a result, a stabilized conversion efficiency of 8.7% (
V
oc
: 0.926 V,
J
sc
: 14.6 mA/cm
2
, FF: 0.646) was achieved under AM 1.5 (100 mW/cm
2
)
illumination. Furthermore, the electrical properties of ZnO films were improved by
employing an atomic layer deposition (ALD) technique instead of the conventional
MOCVD method, and a lower resistivity of 5×10
-4
Ωcm was achieved. It was also
found that the stability of the electrical properties of ZnO films was improved by the
ALD technique. The performance of the a-Si solar cells was further improved by
applying the obtained high-quality ZnO films.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.4983</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999, Vol.38 (9R), p.4983</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c341t-5da13a686f0221a3f84c1d29ae6d8e0988520c4a9b88db81a4677d3355f64f573</citedby><cites>FETCH-LOGICAL-c341t-5da13a686f0221a3f84c1d29ae6d8e0988520c4a9b88db81a4677d3355f64f573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Sang, Baosheng</creatorcontrib><creatorcontrib>Dairiki, Koji</creatorcontrib><creatorcontrib>Yamada, Akira</creatorcontrib><creatorcontrib>Konagai, Makoto</creatorcontrib><title>High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact</title><title>Japanese Journal of Applied Physics</title><description>B-doped ZnO films deposited by the photo-induced metalorganic chemical vapor
deposition (photo-MOCVD) method were applied to p-i-n single junction amorphous silicon (a-Si) solar cells as front contacts. The thickness and the doping level of the p-layer were optimized in order to increase the open-circuit voltage (
V
oc
) of the
fabricated a-Si solar cells. As a result, a stabilized conversion efficiency of 8.7% (
V
oc
: 0.926 V,
J
sc
: 14.6 mA/cm
2
, FF: 0.646) was achieved under AM 1.5 (100 mW/cm
2
)
illumination. Furthermore, the electrical properties of ZnO films were improved by
employing an atomic layer deposition (ALD) technique instead of the conventional
MOCVD method, and a lower resistivity of 5×10
-4
Ωcm was achieved. It was also
found that the stability of the electrical properties of ZnO films was improved by the
ALD technique. The performance of the a-Si solar cells was further improved by
applying the obtained high-quality ZnO films.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNot0E9LwzAABfAgCtbpzQ-QD2Bq_jc9jrI_jsGE6cVLyNLERrpmJBXZt3dFL-_xLu_wA-CR4JIQzp43m_lryVTJa8WuQEEYrxDHUlyDAmNKEK8pvQV3OX9dphScFGC1Dp8dWngfbHCDPcP5MaZTF78z3Ic-2DjAfexNgo3r-wx_wtjBj2EHTYbLFIcRNpcwdrwHN9702T389wy8LxdvzRptd6uXZr5FlnEyItEawoxU0mNKiWFecUtaWhsnW-VwrZSg2HJTH5RqD4oYLquqZUwIL7kXFZuBp79fm2LOyXl9SuFo0lkTrCcEPSFopvSEwH4BsYVOPQ</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Sang, Baosheng</creator><creator>Dairiki, Koji</creator><creator>Yamada, Akira</creator><creator>Konagai, Makoto</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1999</creationdate><title>High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact</title><author>Sang, Baosheng ; Dairiki, Koji ; Yamada, Akira ; Konagai, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-5da13a686f0221a3f84c1d29ae6d8e0988520c4a9b88db81a4677d3355f64f573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sang, Baosheng</creatorcontrib><creatorcontrib>Dairiki, Koji</creatorcontrib><creatorcontrib>Yamada, Akira</creatorcontrib><creatorcontrib>Konagai, Makoto</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sang, Baosheng</au><au>Dairiki, Koji</au><au>Yamada, Akira</au><au>Konagai, Makoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999</date><risdate>1999</risdate><volume>38</volume><issue>9R</issue><spage>4983</spage><pages>4983-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>B-doped ZnO films deposited by the photo-induced metalorganic chemical vapor
deposition (photo-MOCVD) method were applied to p-i-n single junction amorphous silicon (a-Si) solar cells as front contacts. The thickness and the doping level of the p-layer were optimized in order to increase the open-circuit voltage (
V
oc
) of the
fabricated a-Si solar cells. As a result, a stabilized conversion efficiency of 8.7% (
V
oc
: 0.926 V,
J
sc
: 14.6 mA/cm
2
, FF: 0.646) was achieved under AM 1.5 (100 mW/cm
2
)
illumination. Furthermore, the electrical properties of ZnO films were improved by
employing an atomic layer deposition (ALD) technique instead of the conventional
MOCVD method, and a lower resistivity of 5×10
-4
Ωcm was achieved. It was also
found that the stability of the electrical properties of ZnO films was improved by the
ALD technique. The performance of the a-Si solar cells was further improved by
applying the obtained high-quality ZnO films.</abstract><doi>10.1143/JJAP.38.4983</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1999, Vol.38 (9R), p.4983 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_38_4983 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact |
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