Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma

Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN fi...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-08, Vol.38 (8R), p.4868
Hauptverfasser: Gao, Dawei, Furukawa, Katsuhiko, Gao, HiroshiNakashima, Wang, Junli, Muraoka, Katsunori
Format: Artikel
Sprache:eng
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