Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN fi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-08, Vol.38 (8R), p.4868 |
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| container_issue | 8R |
| container_start_page | 4868 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 38 |
| creator | Gao, Dawei Furukawa, Katsuhiko Gao, HiroshiNakashima Wang, Junli Muraoka, Katsunori |
| description | Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering
technique using an electron cyclotron resonance (ECR) plasma. Film properties were
studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and
thermal desorption spectroscopy. A SiN film deposited under the optimum condition of
nitrogen gas flow rate had a refractive index of 2.03 and showed a
large Si–N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by
chemical vapor deposition at 900°C. This indicates that the film deposited using a
sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices
such as organic electroluminescence, which require low temperature processing. |
| doi_str_mv | 10.1143/JJAP.38.4868 |
| format | Article |
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technique using an electron cyclotron resonance (ECR) plasma. Film properties were
studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and
thermal desorption spectroscopy. A SiN film deposited under the optimum condition of
nitrogen gas flow rate had a refractive index of 2.03 and showed a
large Si–N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by
chemical vapor deposition at 900°C. This indicates that the film deposited using a
sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices
such as organic electroluminescence, which require low temperature processing.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.4868</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-08, Vol.38 (8R), p.4868</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-e748fe1f607111223d832d58773bab8f25bb7ca6bf15342dc9e0d3a767e2dd693</citedby><cites>FETCH-LOGICAL-c381t-e748fe1f607111223d832d58773bab8f25bb7ca6bf15342dc9e0d3a767e2dd693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gao, Dawei</creatorcontrib><creatorcontrib>Furukawa, Katsuhiko</creatorcontrib><creatorcontrib>Gao, HiroshiNakashima</creatorcontrib><creatorcontrib>Wang, Junli</creatorcontrib><creatorcontrib>Muraoka, Katsunori</creatorcontrib><title>Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma</title><title>Japanese Journal of Applied Physics</title><description>Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering
technique using an electron cyclotron resonance (ECR) plasma. Film properties were
studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and
thermal desorption spectroscopy. A SiN film deposited under the optimum condition of
nitrogen gas flow rate had a refractive index of 2.03 and showed a
large Si–N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by
chemical vapor deposition at 900°C. This indicates that the film deposited using a
sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices
such as organic electroluminescence, which require low temperature processing.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNo1kEtOwzAYhC0EEqWw4wA-ACnxI7G7rEpbqCpa9bGOHOd3ZZTEkZ1W6oU4JwnQ1cxIM7P4EHom8YgQzl6Xy8lmxOSIy1TeoAFhXEQ8TpNbNIhjSiI-pvQePYTw1cU04WSAvrfOVXgPVQNetScP-A0aF2xrXY2dwTtbWt3ZT9t6WwCe27IK2DiPNyoEe1bX4tofVW01npWgW-_KU2VrCBpq3V-ebSeHYOsjVnjXnNoWfBei_aWB66TG04su3a_bQnC16rebUoVKPaI7o8oAT_86RIf5bD99j1brxcd0soo0k6SNQHBpgJg0FoQQSlkhGS0SKQTLVS4NTfJcaJXmhiSM00KPIS6YEqkAWhTpmA3Ry9-v9i4EDyZrvK2Uv2QkznrGWc84YzLrGbMfVLNzaQ</recordid><startdate>19990801</startdate><enddate>19990801</enddate><creator>Gao, Dawei</creator><creator>Furukawa, Katsuhiko</creator><creator>Gao, HiroshiNakashima</creator><creator>Wang, Junli</creator><creator>Muraoka, Katsunori</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19990801</creationdate><title>Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma</title><author>Gao, Dawei ; Furukawa, Katsuhiko ; Gao, HiroshiNakashima ; Wang, Junli ; Muraoka, Katsunori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-e748fe1f607111223d832d58773bab8f25bb7ca6bf15342dc9e0d3a767e2dd693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Dawei</creatorcontrib><creatorcontrib>Furukawa, Katsuhiko</creatorcontrib><creatorcontrib>Gao, HiroshiNakashima</creatorcontrib><creatorcontrib>Wang, Junli</creatorcontrib><creatorcontrib>Muraoka, Katsunori</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Dawei</au><au>Furukawa, Katsuhiko</au><au>Gao, HiroshiNakashima</au><au>Wang, Junli</au><au>Muraoka, Katsunori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-08-01</date><risdate>1999</risdate><volume>38</volume><issue>8R</issue><spage>4868</spage><pages>4868-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering
technique using an electron cyclotron resonance (ECR) plasma. Film properties were
studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and
thermal desorption spectroscopy. A SiN film deposited under the optimum condition of
nitrogen gas flow rate had a refractive index of 2.03 and showed a
large Si–N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by
chemical vapor deposition at 900°C. This indicates that the film deposited using a
sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices
such as organic electroluminescence, which require low temperature processing.</abstract><doi>10.1143/JJAP.38.4868</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1999-08, Vol.38 (8R), p.4868 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma |
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