Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths: Principle, Limitation and Applications of Optical Shallow Defect Analyzer

To inspect the quality of the silicon wafer surface region where devices are to be fabricated, an instrument termed optical shallow defect analyzer (OSDA) was developed [Takeda et al. .: Mater. Res. Soc. Symp. Proc. 442 (1997) 37]. The OSDA can measure the size and depth of a defect by measuring lig...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999-06, Vol.38 (6R), p.3776
Hauptverfasser:	Takeda, Kazuo, Isomae, Seiichi, Maeshima, MakotoOhkura, ShigeruMatsui, ShigeruMatsui
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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