Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon
Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated at various carrier concentrations. The PA signal intensity at energies lower than the energy gap increased with increasing carrier concentration for both types. The increase is considered to be due to the incre...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-05, Vol.38 (5S), p.3168 |
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container_issue | 5S |
container_start_page | 3168 |
container_title | Japanese Journal of Applied Physics |
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creator | Kuwahata, Hiroshi Muto, Nobuo Uehara, Fumiya Matsumori, Tokue |
description | Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated
at various carrier concentrations. The PA signal intensity at energies lower than the energy gap
increased with increasing carrier concentration for both types. The increase is considered to be
due to the increase in the heat generated in the samples following free carrier absorption and
nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier
concentration of 10
17
cm
-3
for n-type and above that of 10
16
cm
-3
for p-type silicon. |
doi_str_mv | 10.1143/JJAP.38.3168 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_38_3168</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_38_3168</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-8cd5c4588eb5cbfef55b82b9a1731a70b43693d53e1a24eab1aaed48c093b2473</originalsourceid><addsrcrecordid>eNotkMtOwzAURC0EEqWw4wPyAaT45tqJs6zCq1URlQrryHZuwKjYlW0W_D2NYDWa0dEsDmPXwBcAAm_X6-V2gWqBUKsTNgMUTSl4LU_ZjPMKStFW1Tm7SOnzWGspYMaeOx2jo1h0wVvyOersgi_u6EB-oONUhLHYfoQctA3fKTtb7Ny71_ti5TP55PLPROzc3tngL9nZqPeJrv5zzt4e7l-7p3Lz8rjqlpvSooJcKjtIK6RSZKQ1I41SGlWZVkODoBtuBNYtDhIJdCVIG9CaBqEsb9FUosE5u_n7tTGkFGnsD9F96fjTA-8nFf2kokfVTyrwFwjrUo4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon</title><source>Institute of Physics Journals</source><creator>Kuwahata, Hiroshi ; Muto, Nobuo ; Uehara, Fumiya ; Matsumori, Tokue</creator><creatorcontrib>Kuwahata, Hiroshi ; Muto, Nobuo ; Uehara, Fumiya ; Matsumori, Tokue</creatorcontrib><description>Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated
at various carrier concentrations. The PA signal intensity at energies lower than the energy gap
increased with increasing carrier concentration for both types. The increase is considered to be
due to the increase in the heat generated in the samples following free carrier absorption and
nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier
concentration of 10
17
cm
-3
for n-type and above that of 10
16
cm
-3
for p-type silicon.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.38.3168</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1999-05, Vol.38 (5S), p.3168</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-8cd5c4588eb5cbfef55b82b9a1731a70b43693d53e1a24eab1aaed48c093b2473</citedby><cites>FETCH-LOGICAL-c381t-8cd5c4588eb5cbfef55b82b9a1731a70b43693d53e1a24eab1aaed48c093b2473</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kuwahata, Hiroshi</creatorcontrib><creatorcontrib>Muto, Nobuo</creatorcontrib><creatorcontrib>Uehara, Fumiya</creatorcontrib><creatorcontrib>Matsumori, Tokue</creatorcontrib><title>Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon</title><title>Japanese Journal of Applied Physics</title><description>Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated
at various carrier concentrations. The PA signal intensity at energies lower than the energy gap
increased with increasing carrier concentration for both types. The increase is considered to be
due to the increase in the heat generated in the samples following free carrier absorption and
nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier
concentration of 10
17
cm
-3
for n-type and above that of 10
16
cm
-3
for p-type silicon.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAURC0EEqWw4wPyAaT45tqJs6zCq1URlQrryHZuwKjYlW0W_D2NYDWa0dEsDmPXwBcAAm_X6-V2gWqBUKsTNgMUTSl4LU_ZjPMKStFW1Tm7SOnzWGspYMaeOx2jo1h0wVvyOersgi_u6EB-oONUhLHYfoQctA3fKTtb7Ny71_ti5TP55PLPROzc3tngL9nZqPeJrv5zzt4e7l-7p3Lz8rjqlpvSooJcKjtIK6RSZKQ1I41SGlWZVkODoBtuBNYtDhIJdCVIG9CaBqEsb9FUosE5u_n7tTGkFGnsD9F96fjTA-8nFf2kokfVTyrwFwjrUo4</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>Kuwahata, Hiroshi</creator><creator>Muto, Nobuo</creator><creator>Uehara, Fumiya</creator><creator>Matsumori, Tokue</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19990501</creationdate><title>Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon</title><author>Kuwahata, Hiroshi ; Muto, Nobuo ; Uehara, Fumiya ; Matsumori, Tokue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-8cd5c4588eb5cbfef55b82b9a1731a70b43693d53e1a24eab1aaed48c093b2473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuwahata, Hiroshi</creatorcontrib><creatorcontrib>Muto, Nobuo</creatorcontrib><creatorcontrib>Uehara, Fumiya</creatorcontrib><creatorcontrib>Matsumori, Tokue</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuwahata, Hiroshi</au><au>Muto, Nobuo</au><au>Uehara, Fumiya</au><au>Matsumori, Tokue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1999-05-01</date><risdate>1999</risdate><volume>38</volume><issue>5S</issue><spage>3168</spage><pages>3168-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated
at various carrier concentrations. The PA signal intensity at energies lower than the energy gap
increased with increasing carrier concentration for both types. The increase is considered to be
due to the increase in the heat generated in the samples following free carrier absorption and
nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier
concentration of 10
17
cm
-3
for n-type and above that of 10
16
cm
-3
for p-type silicon.</abstract><doi>10.1143/JJAP.38.3168</doi></addata></record> |
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language | eng |
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title | Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon |
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