InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-07, Vol.37 (7B), p.L839
Hauptverfasser:	Mukai, Takashi, Takekawa, Kazunori, Nakamura, Shuji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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