InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1998-07, Vol.37 (7B), p.L839
Hauptverfasser: Mukai, Takashi, Takekawa, Kazunori, Nakamura, Shuji
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 7B
container_start_page L839
container_title Japanese Journal of Applied Physics
container_volume 37
creator Mukai, Takashi
Takekawa, Kazunori
Nakamura, Shuji
description InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.
doi_str_mv 10.1143/JJAP.37.L839
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_L839</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_L839</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-b2e4499b5bd181a43a35302335f94be5839e1f6409412e5a6b28dcca0d52a2d63</originalsourceid><addsrcrecordid>eNotkNFOgzAUhhujiTi98wH6ABbbnpbB5TYZbiHORL2VFChYw2BpO3VvL5tenXPy__mS8yF0y2jImID79Xr2HMI0zGNIzlDAQEyJoJE8RwGlnBGRcH6Jrpz7HM9IChag91WfqScyV07XeN7tNc5N--FJujXem77FD2aotcOZHb57PPQ43RmvfozqugPOldf2tG2-tG1PlZGGX_al83YM3TW6aFTn9M3_nKC3Zfq6eCT5JlstZjmpIGaelFwLkSSlLGsWMyVAgQTKAWSTiFLL8R_NmkjQRDCupYpKHtdVpWgtueJ1BBN098et7OCc1U2xs2ar7KFgtDi6KY5uCpgWRzfwC2yFVxw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Mukai, Takashi ; Takekawa, Kazunori ; Nakamura, Shuji</creator><creatorcontrib>Mukai, Takashi ; Takekawa, Kazunori ; Nakamura, Shuji</creatorcontrib><description>InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.L839</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-07, Vol.37 (7B), p.L839</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-b2e4499b5bd181a43a35302335f94be5839e1f6409412e5a6b28dcca0d52a2d63</citedby><cites>FETCH-LOGICAL-c381t-b2e4499b5bd181a43a35302335f94be5839e1f6409412e5a6b28dcca0d52a2d63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Mukai, Takashi</creatorcontrib><creatorcontrib>Takekawa, Kazunori</creatorcontrib><creatorcontrib>Nakamura, Shuji</creatorcontrib><title>InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates</title><title>Japanese Journal of Applied Physics</title><description>InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkNFOgzAUhhujiTi98wH6ABbbnpbB5TYZbiHORL2VFChYw2BpO3VvL5tenXPy__mS8yF0y2jImID79Xr2HMI0zGNIzlDAQEyJoJE8RwGlnBGRcH6Jrpz7HM9IChag91WfqScyV07XeN7tNc5N--FJujXem77FD2aotcOZHb57PPQ43RmvfozqugPOldf2tG2-tG1PlZGGX_al83YM3TW6aFTn9M3_nKC3Zfq6eCT5JlstZjmpIGaelFwLkSSlLGsWMyVAgQTKAWSTiFLL8R_NmkjQRDCupYpKHtdVpWgtueJ1BBN098et7OCc1U2xs2ar7KFgtDi6KY5uCpgWRzfwC2yFVxw</recordid><startdate>19980715</startdate><enddate>19980715</enddate><creator>Mukai, Takashi</creator><creator>Takekawa, Kazunori</creator><creator>Nakamura, Shuji</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980715</creationdate><title>InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates</title><author>Mukai, Takashi ; Takekawa, Kazunori ; Nakamura, Shuji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-b2e4499b5bd181a43a35302335f94be5839e1f6409412e5a6b28dcca0d52a2d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mukai, Takashi</creatorcontrib><creatorcontrib>Takekawa, Kazunori</creatorcontrib><creatorcontrib>Nakamura, Shuji</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mukai, Takashi</au><au>Takekawa, Kazunori</au><au>Nakamura, Shuji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-07-15</date><risdate>1998</risdate><volume>37</volume><issue>7B</issue><spage>L839</spage><pages>L839-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.</abstract><doi>10.1143/JJAP.37.L839</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1998-07, Vol.37 (7B), p.L839
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_37_L839
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T14%3A40%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaN-Based%20Blue%20Light-Emitting%20Diodes%20Grown%20on%20Epitaxially%20Laterally%20Overgrown%20GaN%20Substrates&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Mukai,%20Takashi&rft.date=1998-07-15&rft.volume=37&rft.issue=7B&rft.spage=L839&rft.pages=L839-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.L839&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_L839%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true