Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compare...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1998, Vol.37 (11B), p.L1386 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 11B |
| container_start_page | L1386 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Takashi Kojima, Takashi Kojima Suguru Tanaka, Suguru Tanaka Hideo Yasumoto, Hideo Yasumoto Hiroyuki Nakaya, Hiroyuki Nakaya Shigeo Tamura, Shigeo Tamura Shigehisa Arai, Shigehisa Arai |
| description | The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step
organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared
with those of quantum-film lasers fabricated on the same wafer.
It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower
than that of the quantum-film laser. |
| doi_str_mv | 10.1143/JJAP.37.L1386 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_L1386</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_L1386</sourcerecordid><originalsourceid>FETCH-LOGICAL-c402t-329fc87d4c89fd40143a2b766ff6ed61718b00bf834359bbff0fc6f2f279a70c3</originalsourceid><addsrcrecordid>eNotkE1Lw0AURQdRsFaX7ucPTDtfnUmWpWhMiRiJ4jJMJu9BpEnLTCL039tWV5e7uAfuIeRR8IUQWi2323W5UHZRCJWYKzITSlumuVldkxnnUjCdSnlL7mL8PlWz0mJGqsx1A60O4Mcw9fQVXJwC9DCMdI80c_mwjuUyH0q62feHADF2P7A7smoMpyG09H1ywzj17KsLQAsXIcR7coNuF-HhP-fk8_npY_PCircs36wL5jWXI1MyRZ_YVvskxVbz0wUnG2sMooHWCCuShvMGE6XVKm0aRI7eoERpU2e5V3PC_rg-7GMMgPUhdL0Lx1rw-mykPhupla0vRtQvR1pUbg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Takashi Kojima, Takashi Kojima ; Suguru Tanaka, Suguru Tanaka ; Hideo Yasumoto, Hideo Yasumoto ; Hiroyuki Nakaya, Hiroyuki Nakaya ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</creator><creatorcontrib>Takashi Kojima, Takashi Kojima ; Suguru Tanaka, Suguru Tanaka ; Hideo Yasumoto, Hideo Yasumoto ; Hiroyuki Nakaya, Hiroyuki Nakaya ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</creatorcontrib><description>The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step
organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared
with those of quantum-film lasers fabricated on the same wafer.
It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower
than that of the quantum-film laser.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.L1386</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998, Vol.37 (11B), p.L1386</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-329fc87d4c89fd40143a2b766ff6ed61718b00bf834359bbff0fc6f2f279a70c3</citedby><cites>FETCH-LOGICAL-c402t-329fc87d4c89fd40143a2b766ff6ed61718b00bf834359bbff0fc6f2f279a70c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,4010,27904,27905,27906</link.rule.ids></links><search><creatorcontrib>Takashi Kojima, Takashi Kojima</creatorcontrib><creatorcontrib>Suguru Tanaka, Suguru Tanaka</creatorcontrib><creatorcontrib>Hideo Yasumoto, Hideo Yasumoto</creatorcontrib><creatorcontrib>Hiroyuki Nakaya, Hiroyuki Nakaya</creatorcontrib><creatorcontrib>Shigeo Tamura, Shigeo Tamura</creatorcontrib><creatorcontrib>Shigehisa Arai, Shigehisa Arai</creatorcontrib><title>Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers</title><title>Japanese Journal of Applied Physics</title><description>The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step
organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared
with those of quantum-film lasers fabricated on the same wafer.
It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower
than that of the quantum-film laser.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkE1Lw0AURQdRsFaX7ucPTDtfnUmWpWhMiRiJ4jJMJu9BpEnLTCL039tWV5e7uAfuIeRR8IUQWi2323W5UHZRCJWYKzITSlumuVldkxnnUjCdSnlL7mL8PlWz0mJGqsx1A60O4Mcw9fQVXJwC9DCMdI80c_mwjuUyH0q62feHADF2P7A7smoMpyG09H1ywzj17KsLQAsXIcR7coNuF-HhP-fk8_npY_PCircs36wL5jWXI1MyRZ_YVvskxVbz0wUnG2sMooHWCCuShvMGE6XVKm0aRI7eoERpU2e5V3PC_rg-7GMMgPUhdL0Lx1rw-mykPhupla0vRtQvR1pUbg</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Takashi Kojima, Takashi Kojima</creator><creator>Suguru Tanaka, Suguru Tanaka</creator><creator>Hideo Yasumoto, Hideo Yasumoto</creator><creator>Hiroyuki Nakaya, Hiroyuki Nakaya</creator><creator>Shigeo Tamura, Shigeo Tamura</creator><creator>Shigehisa Arai, Shigehisa Arai</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1998</creationdate><title>Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers</title><author>Takashi Kojima, Takashi Kojima ; Suguru Tanaka, Suguru Tanaka ; Hideo Yasumoto, Hideo Yasumoto ; Hiroyuki Nakaya, Hiroyuki Nakaya ; Shigeo Tamura, Shigeo Tamura ; Shigehisa Arai, Shigehisa Arai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-329fc87d4c89fd40143a2b766ff6ed61718b00bf834359bbff0fc6f2f279a70c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takashi Kojima, Takashi Kojima</creatorcontrib><creatorcontrib>Suguru Tanaka, Suguru Tanaka</creatorcontrib><creatorcontrib>Hideo Yasumoto, Hideo Yasumoto</creatorcontrib><creatorcontrib>Hiroyuki Nakaya, Hiroyuki Nakaya</creatorcontrib><creatorcontrib>Shigeo Tamura, Shigeo Tamura</creatorcontrib><creatorcontrib>Shigehisa Arai, Shigehisa Arai</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takashi Kojima, Takashi Kojima</au><au>Suguru Tanaka, Suguru Tanaka</au><au>Hideo Yasumoto, Hideo Yasumoto</au><au>Hiroyuki Nakaya, Hiroyuki Nakaya</au><au>Shigeo Tamura, Shigeo Tamura</au><au>Shigehisa Arai, Shigehisa Arai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998</date><risdate>1998</risdate><volume>37</volume><issue>11B</issue><spage>L1386</spage><pages>L1386-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step
organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared
with those of quantum-film lasers fabricated on the same wafer.
It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower
than that of the quantum-film laser.</abstract><doi>10.1143/JJAP.37.L1386</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998, Vol.37 (11B), p.L1386 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_L1386 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T07%3A49%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gain%20Spectrum%20Measurement%20of%20GaInAsP/InP%20Compressively-Strained%20Quantum-Wire%20Lasers&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Takashi%20Kojima,%20Takashi%20Kojima&rft.date=1998&rft.volume=37&rft.issue=11B&rft.spage=L1386&rft.pages=L1386-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.L1386&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_L1386%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |