Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (1120) (a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD). Ethyl biscyclopentadienyl magnesium (Et-Cp 2 Mg) and methyl silane (Me-SiH 3 ) were used as precursors...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1998-10, Vol.37 (10B), p.L1231 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 10B |
| container_start_page | L1231 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Kimura, Yoshinori Miyachi, Mamoru Takahashi, Hirokazu Tanaka, Toshiyuki Nishitsuka, Mitsuru Watanabe, Atsushi Ota, Hiroyuki Chikuma, Kiyofumi |
| description | We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (1120)
(a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD).
Ethyl biscyclopentadienyl magnesium (Et-Cp
2
Mg) and methyl silane (Me-SiH
3
) were
used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face
sapphire substrate along (1102) (r-face). The threshold current density was 41 kA/cm
2
and the
operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at
411 nm. |
| doi_str_mv | 10.1143/JJAP.37.L1231 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_L1231</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_L1231</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-1aa7a8f12624354353cecf80184bb67f0941224a8e4a676dc8ce6df4135d05d73</originalsourceid><addsrcrecordid>eNotUNtOwkAQ3RhNRPTR9_2Bxb31wiOioqQKEfS1mW6nUkPZZreE8CH-r1s0mcxkzuScMzmE3Ao-EkKru_l8shypZJQJqcQZGQilE6Z5HJ2TAedSMD2W8pJcef8d1jjSYkB-3q1t2BqbFh10e4d0ud96LOniBNR2R21FZ_DG7qGHs9AdfahtiZ6GI7AnMEhX0LabOrBX-8J3gYh05uxhR4sjzeyBLR1636u_Ygdb675gVxs63WBTG9jST2htUMXW-rr3vCYXFYQ3bv7nkHw8Pa6nzyxbzF6mk4wZOZYdEwAJpJWQsdQqCqUMmirlItVFEScVH2shpYYUNcRJXJrUYFxWWqio5FGZqCFhf7rGWe8dVnnr6gbcMRc87zPN-0xzleSnTNUvGbVroQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Kimura, Yoshinori ; Miyachi, Mamoru ; Takahashi, Hirokazu ; Tanaka, Toshiyuki ; Nishitsuka, Mitsuru ; Watanabe, Atsushi ; Ota, Hiroyuki ; Chikuma, Kiyofumi</creator><creatorcontrib>Kimura, Yoshinori ; Miyachi, Mamoru ; Takahashi, Hirokazu ; Tanaka, Toshiyuki ; Nishitsuka, Mitsuru ; Watanabe, Atsushi ; Ota, Hiroyuki ; Chikuma, Kiyofumi</creatorcontrib><description>We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (1120)
(a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD).
Ethyl biscyclopentadienyl magnesium (Et-Cp
2
Mg) and methyl silane (Me-SiH
3
) were
used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face
sapphire substrate along (1102) (r-face). The threshold current density was 41 kA/cm
2
and the
operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at
411 nm.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.L1231</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-10, Vol.37 (10B), p.L1231</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-1aa7a8f12624354353cecf80184bb67f0941224a8e4a676dc8ce6df4135d05d73</citedby><cites>FETCH-LOGICAL-c292t-1aa7a8f12624354353cecf80184bb67f0941224a8e4a676dc8ce6df4135d05d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Kimura, Yoshinori</creatorcontrib><creatorcontrib>Miyachi, Mamoru</creatorcontrib><creatorcontrib>Takahashi, Hirokazu</creatorcontrib><creatorcontrib>Tanaka, Toshiyuki</creatorcontrib><creatorcontrib>Nishitsuka, Mitsuru</creatorcontrib><creatorcontrib>Watanabe, Atsushi</creatorcontrib><creatorcontrib>Ota, Hiroyuki</creatorcontrib><creatorcontrib>Chikuma, Kiyofumi</creatorcontrib><title>Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition</title><title>Japanese Journal of Applied Physics</title><description>We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (1120)
(a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD).
Ethyl biscyclopentadienyl magnesium (Et-Cp
2
Mg) and methyl silane (Me-SiH
3
) were
used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face
sapphire substrate along (1102) (r-face). The threshold current density was 41 kA/cm
2
and the
operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at
411 nm.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotUNtOwkAQ3RhNRPTR9_2Bxb31wiOioqQKEfS1mW6nUkPZZreE8CH-r1s0mcxkzuScMzmE3Ao-EkKru_l8shypZJQJqcQZGQilE6Z5HJ2TAedSMD2W8pJcef8d1jjSYkB-3q1t2BqbFh10e4d0ud96LOniBNR2R21FZ_DG7qGHs9AdfahtiZ6GI7AnMEhX0LabOrBX-8J3gYh05uxhR4sjzeyBLR1636u_Ygdb675gVxs63WBTG9jST2htUMXW-rr3vCYXFYQ3bv7nkHw8Pa6nzyxbzF6mk4wZOZYdEwAJpJWQsdQqCqUMmirlItVFEScVH2shpYYUNcRJXJrUYFxWWqio5FGZqCFhf7rGWe8dVnnr6gbcMRc87zPN-0xzleSnTNUvGbVroQ</recordid><startdate>19981015</startdate><enddate>19981015</enddate><creator>Kimura, Yoshinori</creator><creator>Miyachi, Mamoru</creator><creator>Takahashi, Hirokazu</creator><creator>Tanaka, Toshiyuki</creator><creator>Nishitsuka, Mitsuru</creator><creator>Watanabe, Atsushi</creator><creator>Ota, Hiroyuki</creator><creator>Chikuma, Kiyofumi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981015</creationdate><title>Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition</title><author>Kimura, Yoshinori ; Miyachi, Mamoru ; Takahashi, Hirokazu ; Tanaka, Toshiyuki ; Nishitsuka, Mitsuru ; Watanabe, Atsushi ; Ota, Hiroyuki ; Chikuma, Kiyofumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-1aa7a8f12624354353cecf80184bb67f0941224a8e4a676dc8ce6df4135d05d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kimura, Yoshinori</creatorcontrib><creatorcontrib>Miyachi, Mamoru</creatorcontrib><creatorcontrib>Takahashi, Hirokazu</creatorcontrib><creatorcontrib>Tanaka, Toshiyuki</creatorcontrib><creatorcontrib>Nishitsuka, Mitsuru</creatorcontrib><creatorcontrib>Watanabe, Atsushi</creatorcontrib><creatorcontrib>Ota, Hiroyuki</creatorcontrib><creatorcontrib>Chikuma, Kiyofumi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kimura, Yoshinori</au><au>Miyachi, Mamoru</au><au>Takahashi, Hirokazu</au><au>Tanaka, Toshiyuki</au><au>Nishitsuka, Mitsuru</au><au>Watanabe, Atsushi</au><au>Ota, Hiroyuki</au><au>Chikuma, Kiyofumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-10-15</date><risdate>1998</risdate><volume>37</volume><issue>10B</issue><spage>L1231</spage><pages>L1231-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (1120)
(a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD).
Ethyl biscyclopentadienyl magnesium (Et-Cp
2
Mg) and methyl silane (Me-SiH
3
) were
used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face
sapphire substrate along (1102) (r-face). The threshold current density was 41 kA/cm
2
and the
operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at
411 nm.</abstract><doi>10.1143/JJAP.37.L1231</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998-10, Vol.37 (10B), p.L1231 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_L1231 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T17%3A43%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-Temperature%20Pulsed%20Operation%20of%20GaN-Based%20Laser%20Diodes%20on%20a-Face%20Sapphire%20Substrate%20Grown%20by%20Low-Pressure%20Metalorganic%20Chemical%20Vapor%20Deposition&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kimura,%20Yoshinori&rft.date=1998-10-15&rft.volume=37&rft.issue=10B&rft.spage=L1231&rft.pages=L1231-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.L1231&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_L1231%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |