Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography

Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography

The image shortening of rectangular array patterns replicated by proximity X-ray lithography was investigated. The shorter pattern width was 100 to 200 nm, and shortening on the longer side was studied. Either a negative or positive tone of the mask was used. The experimental results were compared w...

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Veröffentlicht in:Japanese Journal of Applied Physics 1998-12, Vol.37 (12S), p.6799
Hauptverfasser: Mitsui, Soichiro, Tanaka, Yuusuke, Taguchi, Takao, Hisatsugu, Yoshio Gomei andTokushige
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container_issue 12S
container_start_page 6799
container_title Japanese Journal of Applied Physics
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creator Mitsui, Soichiro
Tanaka, Yuusuke
Taguchi, Takao
Hisatsugu, Yoshio Gomei andTokushige
description The image shortening of rectangular array patterns replicated by proximity X-ray lithography was investigated. The shorter pattern width was 100 to 200 nm, and shortening on the longer side was studied. Either a negative or positive tone of the mask was used. The experimental results were compared with the absorbed dose distribution calculated using ToolSet developed at the Center for X-ray Lithography (CXrL). The geometrical features of mask patterns, such as absorber side-wall angle, corner rounding, and pattern resize were taken into account. It was found that image shortening is greater with negative tone masks, while negative tone masks provide higher resolution than positive tone masks. It was also found that the slope of the absorber side wall plays an important role in image shortening. The results suggest that the use of negative tone masks, careful tailoring of the absorber side wall, and proper pattern resizing will provide required dimensions for rectangular array patterns.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_6799</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_6799</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-390bd814bc208704f39bcc995e7f10a4b46d3f8cffe30176b13e5ea59db1cc8b3</originalsourceid><addsrcrecordid>eNot0EFPgzAcBfDGaCJOb36AfgDB_mmh9EiW6baQuKAm3khbWsAwWEpnwrd3RE8v7x3e4YfQI5AIgNHn_T4_RJRHKRfiCgVAGQ8ZSZNrFBASQ8hEHN-iu2n6vtQ0YRCgcvMj-7P03Tjg0eLdUTYGv7ej82bohgbb0eHSaC-H5txLh3Pn5IwP0nvjhgl3A_4Ky8tSdL4dGydP7XyPbqzsJ_Pwnyv0-bL5WG_D4u11t86LUNMMfEgFUXUGTOmYZJwwS4XSWojEcAtEMsXSmtpMW2soAZ4qoCYxMhG1Aq0zRVfo6e9Xu3GanLHVyXVH6eYKSLV4VItHRXm1eNBfcjpT-A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Mitsui, Soichiro ; Tanaka, Yuusuke ; Taguchi, Takao ; Hisatsugu, Yoshio Gomei andTokushige</creator><creatorcontrib>Mitsui, Soichiro ; Tanaka, Yuusuke ; Taguchi, Takao ; Hisatsugu, Yoshio Gomei andTokushige</creatorcontrib><description>The image shortening of rectangular array patterns replicated by proximity X-ray lithography was investigated. The shorter pattern width was 100 to 200 nm, and shortening on the longer side was studied. Either a negative or positive tone of the mask was used. The experimental results were compared with the absorbed dose distribution calculated using ToolSet developed at the Center for X-ray Lithography (CXrL). The geometrical features of mask patterns, such as absorber side-wall angle, corner rounding, and pattern resize were taken into account. It was found that image shortening is greater with negative tone masks, while negative tone masks provide higher resolution than positive tone masks. It was also found that the slope of the absorber side wall plays an important role in image shortening. The results suggest that the use of negative tone masks, careful tailoring of the absorber side wall, and proper pattern resizing will provide required dimensions for rectangular array patterns.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.6799</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6799</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-390bd814bc208704f39bcc995e7f10a4b46d3f8cffe30176b13e5ea59db1cc8b3</citedby><cites>FETCH-LOGICAL-c381t-390bd814bc208704f39bcc995e7f10a4b46d3f8cffe30176b13e5ea59db1cc8b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Mitsui, Soichiro</creatorcontrib><creatorcontrib>Tanaka, Yuusuke</creatorcontrib><creatorcontrib>Taguchi, Takao</creatorcontrib><creatorcontrib>Hisatsugu, Yoshio Gomei andTokushige</creatorcontrib><title>Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography</title><title>Japanese Journal of Applied Physics</title><description>The image shortening of rectangular array patterns replicated by proximity X-ray lithography was investigated. The shorter pattern width was 100 to 200 nm, and shortening on the longer side was studied. Either a negative or positive tone of the mask was used. The experimental results were compared with the absorbed dose distribution calculated using ToolSet developed at the Center for X-ray Lithography (CXrL). The geometrical features of mask patterns, such as absorber side-wall angle, corner rounding, and pattern resize were taken into account. It was found that image shortening is greater with negative tone masks, while negative tone masks provide higher resolution than positive tone masks. It was also found that the slope of the absorber side wall plays an important role in image shortening. The results suggest that the use of negative tone masks, careful tailoring of the absorber side wall, and proper pattern resizing will provide required dimensions for rectangular array patterns.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNot0EFPgzAcBfDGaCJOb36AfgDB_mmh9EiW6baQuKAm3khbWsAwWEpnwrd3RE8v7x3e4YfQI5AIgNHn_T4_RJRHKRfiCgVAGQ8ZSZNrFBASQ8hEHN-iu2n6vtQ0YRCgcvMj-7P03Tjg0eLdUTYGv7ej82bohgbb0eHSaC-H5txLh3Pn5IwP0nvjhgl3A_4Ky8tSdL4dGydP7XyPbqzsJ_Pwnyv0-bL5WG_D4u11t86LUNMMfEgFUXUGTOmYZJwwS4XSWojEcAtEMsXSmtpMW2soAZ4qoCYxMhG1Aq0zRVfo6e9Xu3GanLHVyXVH6eYKSLV4VItHRXm1eNBfcjpT-A</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Mitsui, Soichiro</creator><creator>Tanaka, Yuusuke</creator><creator>Taguchi, Takao</creator><creator>Hisatsugu, Yoshio Gomei andTokushige</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981201</creationdate><title>Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography</title><author>Mitsui, Soichiro ; Tanaka, Yuusuke ; Taguchi, Takao ; Hisatsugu, Yoshio Gomei andTokushige</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-390bd814bc208704f39bcc995e7f10a4b46d3f8cffe30176b13e5ea59db1cc8b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mitsui, Soichiro</creatorcontrib><creatorcontrib>Tanaka, Yuusuke</creatorcontrib><creatorcontrib>Taguchi, Takao</creatorcontrib><creatorcontrib>Hisatsugu, Yoshio Gomei andTokushige</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mitsui, Soichiro</au><au>Tanaka, Yuusuke</au><au>Taguchi, Takao</au><au>Hisatsugu, Yoshio Gomei andTokushige</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-12-01</date><risdate>1998</risdate><volume>37</volume><issue>12S</issue><spage>6799</spage><pages>6799-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The image shortening of rectangular array patterns replicated by proximity X-ray lithography was investigated. The shorter pattern width was 100 to 200 nm, and shortening on the longer side was studied. Either a negative or positive tone of the mask was used. The experimental results were compared with the absorbed dose distribution calculated using ToolSet developed at the Center for X-ray Lithography (CXrL). The geometrical features of mask patterns, such as absorber side-wall angle, corner rounding, and pattern resize were taken into account. It was found that image shortening is greater with negative tone masks, while negative tone masks provide higher resolution than positive tone masks. It was also found that the slope of the absorber side wall plays an important role in image shortening. The results suggest that the use of negative tone masks, careful tailoring of the absorber side wall, and proper pattern resizing will provide required dimensions for rectangular array patterns.</abstract><doi>10.1143/JJAP.37.6799</doi></addata></record>
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title Evaluation of Image Shortening for Rectangular Array Patterns in X-Ray Lithography
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T14%3A27%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evaluation%20of%20Image%20Shortening%20for%20Rectangular%20Array%20Patterns%20in%20X-Ray%20Lithography&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Mitsui,%20Soichiro&rft.date=1998-12-01&rft.volume=37&rft.issue=12S&rft.spage=6799&rft.pages=6799-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.6799&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_6799%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true