Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

Homoepitaxial growth of GaN on bulk GaN prepared by the sublimation method was performed by metalorganic chemical vapor deposition (MOCVD). Two kinds of bulk substrates were used for homoepitaxial growth: (i) a polished bulk GaN C-face, selectively grown on MOCVD-GaN on a sapphire (0001) substrate w...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-02, Vol.37 (2R), p.626
Hauptverfasser:	Sato, Hisao, Sugahara, Tomoya, Hao, Maosheng, Naoi, Yoshiki, Kurai, Satoshi, Yamashita, Kenji, Nishino, Katsushi, Sakai, Shiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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