Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation
Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1998-10, Vol.37 (10R), p.5614 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 10R |
| container_start_page | 5614 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Ma, Jin Zhang, Dehang Li, Shuying Zhao, Junqing Ma, Honglei |
| description | Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on
polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The
structural, optical and electrical properties of the deposited films have been investigated.
High quality films with resistivity as low as 7×10
-4
Ω·cm and transmittance over 80% have
been obtained. The temperature dependence of mobility and carrier concentration have been
measured over a temperature range 10–400 K. Corresponding scattering mechanism of
charge carriers in the films have been discussed. |
| doi_str_mv | 10.1143/JJAP.37.5614 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_5614</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_5614</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-e8b8840604e76cacc15d6c00b2cfdac18ed3158e25a2e28232117f3c79d69c8e3</originalsourceid><addsrcrecordid>eNotkF1LwzAYhYMoOKd3_oD8ADvzJmmbXY656cZgw4_rkiZvIdI2JYnD_Xs79erwcOBweAi5BzYDkOJxu10cZqKc5QXICzIBIctMsiK_JBPGOGRyzvk1uYnxc8QilzAhfj8kZ3RLdW_pqkWTwi8egh8wJIeR-oa-9Zkd2dJNb91XR_ffziJdu7aL9AkHH10aS9_Tg29PGBMGWp_oK2qT3BHp6qgHH3Ryvr8lV41uI97955R8rFfvy5dst3_eLBe7zAgQKUNVKzVeZxLLwmhjILeFYazmprHagEIrIFfIc82RKy44QNkIU85tMTcKxZQ8_O2a4GMM2FRDcJ0OpwpYdZZVnWVVoqzOssQP6WFeJQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ma, Jin ; Zhang, Dehang ; Li, Shuying ; Zhao, Junqing ; Ma, Honglei</creator><creatorcontrib>Ma, Jin ; Zhang, Dehang ; Li, Shuying ; Zhao, Junqing ; Ma, Honglei</creatorcontrib><description>Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on
polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The
structural, optical and electrical properties of the deposited films have been investigated.
High quality films with resistivity as low as 7×10
-4
Ω·cm and transmittance over 80% have
been obtained. The temperature dependence of mobility and carrier concentration have been
measured over a temperature range 10–400 K. Corresponding scattering mechanism of
charge carriers in the films have been discussed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.5614</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-10, Vol.37 (10R), p.5614</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-e8b8840604e76cacc15d6c00b2cfdac18ed3158e25a2e28232117f3c79d69c8e3</citedby><cites>FETCH-LOGICAL-c313t-e8b8840604e76cacc15d6c00b2cfdac18ed3158e25a2e28232117f3c79d69c8e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Ma, Jin</creatorcontrib><creatorcontrib>Zhang, Dehang</creatorcontrib><creatorcontrib>Li, Shuying</creatorcontrib><creatorcontrib>Zhao, Junqing</creatorcontrib><creatorcontrib>Ma, Honglei</creatorcontrib><title>Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation</title><title>Japanese Journal of Applied Physics</title><description>Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on
polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The
structural, optical and electrical properties of the deposited films have been investigated.
High quality films with resistivity as low as 7×10
-4
Ω·cm and transmittance over 80% have
been obtained. The temperature dependence of mobility and carrier concentration have been
measured over a temperature range 10–400 K. Corresponding scattering mechanism of
charge carriers in the films have been discussed.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYhYMoOKd3_oD8ADvzJmmbXY656cZgw4_rkiZvIdI2JYnD_Xs79erwcOBweAi5BzYDkOJxu10cZqKc5QXICzIBIctMsiK_JBPGOGRyzvk1uYnxc8QilzAhfj8kZ3RLdW_pqkWTwi8egh8wJIeR-oa-9Zkd2dJNb91XR_ffziJdu7aL9AkHH10aS9_Tg29PGBMGWp_oK2qT3BHp6qgHH3Ryvr8lV41uI97955R8rFfvy5dst3_eLBe7zAgQKUNVKzVeZxLLwmhjILeFYazmprHagEIrIFfIc82RKy44QNkIU85tMTcKxZQ8_O2a4GMM2FRDcJ0OpwpYdZZVnWVVoqzOssQP6WFeJQ</recordid><startdate>19981001</startdate><enddate>19981001</enddate><creator>Ma, Jin</creator><creator>Zhang, Dehang</creator><creator>Li, Shuying</creator><creator>Zhao, Junqing</creator><creator>Ma, Honglei</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981001</creationdate><title>Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation</title><author>Ma, Jin ; Zhang, Dehang ; Li, Shuying ; Zhao, Junqing ; Ma, Honglei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-e8b8840604e76cacc15d6c00b2cfdac18ed3158e25a2e28232117f3c79d69c8e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ma, Jin</creatorcontrib><creatorcontrib>Zhang, Dehang</creatorcontrib><creatorcontrib>Li, Shuying</creatorcontrib><creatorcontrib>Zhao, Junqing</creatorcontrib><creatorcontrib>Ma, Honglei</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ma, Jin</au><au>Zhang, Dehang</au><au>Li, Shuying</au><au>Zhao, Junqing</au><au>Ma, Honglei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-10-01</date><risdate>1998</risdate><volume>37</volume><issue>10R</issue><spage>5614</spage><pages>5614-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on
polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The
structural, optical and electrical properties of the deposited films have been investigated.
High quality films with resistivity as low as 7×10
-4
Ω·cm and transmittance over 80% have
been obtained. The temperature dependence of mobility and carrier concentration have been
measured over a temperature range 10–400 K. Corresponding scattering mechanism of
charge carriers in the films have been discussed.</abstract><doi>10.1143/JJAP.37.5614</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998-10, Vol.37 (10R), p.5614 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_5614 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T13%3A50%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20and%20Electrical%20Properties%20of%20Sn-doped%20Indium%20Oxide%20Films%20Deposited%20on%20Polyester%20by%20Reactive%20Evaporation&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ma,%20Jin&rft.date=1998-10-01&rft.volume=37&rft.issue=10R&rft.spage=5614&rft.pages=5614-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.5614&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_5614%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |