Growth Mechanisms of Aluminum Dots Deposited by Laser-induced Decomposition of Trimethylamine Alane
Aluminum dots have been deposited by thermal decomposition of trimethylamine alane (TMAA) on silicon substrates irradiated with a tightly focused argon ion laser beam (λ=514 nm). Carbon free Al deposits containing less than 5 at.% of impurities (mainly oxygen) detected by Auger Electron Spectroscopy...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1998-09, Vol.37 (9R), p.4954 |
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| container_issue | 9R |
| container_start_page | 4954 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Tonneau, Didier Thuron, Frédéric Correia, Antonio Bouree, Jean Eric Pauleau, Yves |
| description | Aluminum dots have been deposited by thermal decomposition
of trimethylamine alane (TMAA) on silicon substrates irradiated
with a tightly focused argon ion laser beam (λ=514 nm). Carbon
free Al deposits containing less than 5 at.% of impurities
(mainly oxygen) detected by Auger Electron Spectroscopy were
grown. The growth kinetics of Al dots was investigated as a
function of TMAA pressure and laser-induced temperature. The
deposition of dots occurred at a laser-induced temperature as
low as 210°C. The TMAA decomposition was thermally activated
(activation energy of 18 kcal/mole) and the deposition rate at
300°C was equal to 2 µm/s. The effects of H
2
or He (used as
buffer gases) in the gas phase on the growth kinetics of dots
was also studied. The growth mechanisms of dots are discussed
and proposed on the basis of the results of this kinetic study. |
| doi_str_mv | 10.1143/JJAP.37.4954 |
| format | Article |
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of trimethylamine alane (TMAA) on silicon substrates irradiated
with a tightly focused argon ion laser beam (λ=514 nm). Carbon
free Al deposits containing less than 5 at.% of impurities
(mainly oxygen) detected by Auger Electron Spectroscopy were
grown. The growth kinetics of Al dots was investigated as a
function of TMAA pressure and laser-induced temperature. The
deposition of dots occurred at a laser-induced temperature as
low as 210°C. The TMAA decomposition was thermally activated
(activation energy of 18 kcal/mole) and the deposition rate at
300°C was equal to 2 µm/s. The effects of H
2
or He (used as
buffer gases) in the gas phase on the growth kinetics of dots
was also studied. The growth mechanisms of dots are discussed
and proposed on the basis of the results of this kinetic study.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.4954</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-09, Vol.37 (9R), p.4954</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-c8f7000f134dd1351841b3e21d74c25bffb0c7aae214b4dde936be86e13b35bf3</citedby><cites>FETCH-LOGICAL-c381t-c8f7000f134dd1351841b3e21d74c25bffb0c7aae214b4dde936be86e13b35bf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tonneau, Didier</creatorcontrib><creatorcontrib>Thuron, Frédéric</creatorcontrib><creatorcontrib>Correia, Antonio</creatorcontrib><creatorcontrib>Bouree, Jean Eric</creatorcontrib><creatorcontrib>Pauleau, Yves</creatorcontrib><title>Growth Mechanisms of Aluminum Dots Deposited by Laser-induced Decomposition of Trimethylamine Alane</title><title>Japanese Journal of Applied Physics</title><description>Aluminum dots have been deposited by thermal decomposition
of trimethylamine alane (TMAA) on silicon substrates irradiated
with a tightly focused argon ion laser beam (λ=514 nm). Carbon
free Al deposits containing less than 5 at.% of impurities
(mainly oxygen) detected by Auger Electron Spectroscopy were
grown. The growth kinetics of Al dots was investigated as a
function of TMAA pressure and laser-induced temperature. The
deposition of dots occurred at a laser-induced temperature as
low as 210°C. The TMAA decomposition was thermally activated
(activation energy of 18 kcal/mole) and the deposition rate at
300°C was equal to 2 µm/s. The effects of H
2
or He (used as
buffer gases) in the gas phase on the growth kinetics of dots
was also studied. The growth mechanisms of dots are discussed
and proposed on the basis of the results of this kinetic study.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkEFPhDAQhRujibh68wf0B8jaoYWyx82urm4weljPpC3TgAG6oRDDv7eop8m8N_Pl5RFyD2wNIPjj8bj9WHO5FptUXJAIuJCxYFl6SSLGEojFJkmuyY33X2HNUgERMYfBfY81fUNTq77xnafO0m07dU0_dXTvRk_3eHa-GbGieqaF8jjETV9NJgh7NK77dRvXL5-noelwrOdWBQAGkOrxllxZ1Xq8-58r8vn8dNq9xMX74XW3LWLDcxhjk1vJGLMhdlUBTyEXoDkmUElhklRbq5mRSgVF6HCCG55pzDMErnmw-Yo8_HHN4Lwf0JbnkEYNcwmsXAoql4JKLsulIP4DXG1afg</recordid><startdate>19980901</startdate><enddate>19980901</enddate><creator>Tonneau, Didier</creator><creator>Thuron, Frédéric</creator><creator>Correia, Antonio</creator><creator>Bouree, Jean Eric</creator><creator>Pauleau, Yves</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980901</creationdate><title>Growth Mechanisms of Aluminum Dots Deposited by Laser-induced Decomposition of Trimethylamine Alane</title><author>Tonneau, Didier ; Thuron, Frédéric ; Correia, Antonio ; Bouree, Jean Eric ; Pauleau, Yves</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-c8f7000f134dd1351841b3e21d74c25bffb0c7aae214b4dde936be86e13b35bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tonneau, Didier</creatorcontrib><creatorcontrib>Thuron, Frédéric</creatorcontrib><creatorcontrib>Correia, Antonio</creatorcontrib><creatorcontrib>Bouree, Jean Eric</creatorcontrib><creatorcontrib>Pauleau, Yves</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tonneau, Didier</au><au>Thuron, Frédéric</au><au>Correia, Antonio</au><au>Bouree, Jean Eric</au><au>Pauleau, Yves</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth Mechanisms of Aluminum Dots Deposited by Laser-induced Decomposition of Trimethylamine Alane</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-09-01</date><risdate>1998</risdate><volume>37</volume><issue>9R</issue><spage>4954</spage><pages>4954-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Aluminum dots have been deposited by thermal decomposition
of trimethylamine alane (TMAA) on silicon substrates irradiated
with a tightly focused argon ion laser beam (λ=514 nm). Carbon
free Al deposits containing less than 5 at.% of impurities
(mainly oxygen) detected by Auger Electron Spectroscopy were
grown. The growth kinetics of Al dots was investigated as a
function of TMAA pressure and laser-induced temperature. The
deposition of dots occurred at a laser-induced temperature as
low as 210°C. The TMAA decomposition was thermally activated
(activation energy of 18 kcal/mole) and the deposition rate at
300°C was equal to 2 µm/s. The effects of H
2
or He (used as
buffer gases) in the gas phase on the growth kinetics of dots
was also studied. The growth mechanisms of dots are discussed
and proposed on the basis of the results of this kinetic study.</abstract><doi>10.1143/JJAP.37.4954</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1998-09, Vol.37 (9R), p.4954 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_4954 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Growth Mechanisms of Aluminum Dots Deposited by Laser-induced Decomposition of Trimethylamine Alane |
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