Reactions on Si(100) and Chemical Oxide Surfaces in Dissolved-Oxygen Controlled Deionized Water

This paper discusses the characteristics of Si and chemical oxide surfaces rinsed with deionized (DI) water with dissolved oxygen (DO) concentration ranging from 0.08 ppm to 2.0 ppm, controlled by N 2 bubbling, at temperatures ranging from 23°C to 80°C. From the aspect of electrochemistry, it is sho...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-02, Vol.37 (2R), p.462
Hauptverfasser:	Nakamori, Masaharu, Aoto, Nahomi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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