Study of Pt Bottom Electrodes using High-Temperature Sputtering for Ferroelectric Memories with SrBi 2 Ta 2 O 9 (SBTO) Film

Pt bottom electrodes for SrBi 2 Ta 2 O 9 (SBTO) capacitors have been investigated for use in nonvolatile memories. A Pt thin film which is sputtered at a temperature of 300°C consists of enlarged columnar grains, while a film sputtered at room temperature consists of fibrous columnar grains. The for...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-07, Vol.37 (7R), p.4144
Hauptverfasser:	Nasu, Toru, Kibe, Masaki, Uemoto, Yasuhiro, Fujii, Eiji, Otsuki, Tatsuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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