Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

The radicals of capacitive plasmas actually used in mass production were analyzed using various measurement systems. The composition of radicals in bulk plasma depends on the gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent gas (C 4 F 8 ) is dissocia...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-04, Vol.37 (4S), p.2394
Hauptverfasser:	Tatsumi, Tetsuya, Hayashi, Hisataka, Morishita, Satoshi, Noda, Shuichi, Okigawa, Mitsuru, Itabashi, Naoshi, Hikosaka, Yukinobu, Inoue, Masami
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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