Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
The radicals of capacitive plasmas actually used in mass production were analyzed using various measurement systems. The composition of radicals in bulk plasma depends on the gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent gas (C 4 F 8 ) is dissocia...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1998-04, Vol.37 (4S), p.2394 |
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| container_issue | 4S |
| container_start_page | 2394 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Tatsumi, Tetsuya Hayashi, Hisataka Morishita, Satoshi Noda, Shuichi Okigawa, Mitsuru Itabashi, Naoshi Hikosaka, Yukinobu Inoue, Masami |
| description | The radicals of capacitive plasmas actually used in mass production were analyzed
using various measurement systems. The composition of radicals in bulk plasma depends on the
gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent
gas (C
4
F
8
) is dissociated by multiple collision with electrons according to τ·
n
e
,
where τ is the residence time,
n
e
is the electron density, σ is the dissociation collision cross
section and
v
is the electron velocity. A high-performance etching process, which can realize
0.09 µmφ contact holes with aspect ratio of 11, was achieved using a short residence time to
suppress the excess dissociation and the control of deposition species through the addition of O
2
to C
4
F
8
/Ar plasma as well as the reduction of the density of F radicals through the reaction with
the Si wall. |
| doi_str_mv | 10.1143/JJAP.37.2394 |
| format | Article |
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using various measurement systems. The composition of radicals in bulk plasma depends on the
gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent
gas (C
4
F
8
) is dissociated by multiple collision with electrons according to τ·
n
e
<σ
v
>,
where τ is the residence time,
n
e
is the electron density, σ is the dissociation collision cross
section and
v
is the electron velocity. A high-performance etching process, which can realize
0.09 µmφ contact holes with aspect ratio of 11, was achieved using a short residence time to
suppress the excess dissociation and the control of deposition species through the addition of O
2
to C
4
F
8
/Ar plasma as well as the reduction of the density of F radicals through the reaction with
the Si wall.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.2394</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-04, Vol.37 (4S), p.2394</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-f01cf5f19ad0a6106923472acd2084db84497d88bfdd47278dbe7a762d960ecc3</citedby><cites>FETCH-LOGICAL-c381t-f01cf5f19ad0a6106923472acd2084db84497d88bfdd47278dbe7a762d960ecc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tatsumi, Tetsuya</creatorcontrib><creatorcontrib>Hayashi, Hisataka</creatorcontrib><creatorcontrib>Morishita, Satoshi</creatorcontrib><creatorcontrib>Noda, Shuichi</creatorcontrib><creatorcontrib>Okigawa, Mitsuru</creatorcontrib><creatorcontrib>Itabashi, Naoshi</creatorcontrib><creatorcontrib>Hikosaka, Yukinobu</creatorcontrib><creatorcontrib>Inoue, Masami</creatorcontrib><title>Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing</title><title>Japanese Journal of Applied Physics</title><description>The radicals of capacitive plasmas actually used in mass production were analyzed
using various measurement systems. The composition of radicals in bulk plasma depends on the
gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent
gas (C
4
F
8
) is dissociated by multiple collision with electrons according to τ·
n
e
<σ
v
>,
where τ is the residence time,
n
e
is the electron density, σ is the dissociation collision cross
section and
v
is the electron velocity. A high-performance etching process, which can realize
0.09 µmφ contact holes with aspect ratio of 11, was achieved using a short residence time to
suppress the excess dissociation and the control of deposition species through the addition of O
2
to C
4
F
8
/Ar plasma as well as the reduction of the density of F radicals through the reaction with
the Si wall.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkMtKw0AYhQdRMFZ3PsA8gKlzSyazLMHaloih2nX4MxcdyaXMBMG3N0FXh3MWH4cPoXtK1pQK_ng4bOo1l2vGlbhACeVCpoLk2SVKCGE0FYqxa3QT49dc80zQBO1erP6Ewccejw4fwXgNHS7HYQpjh_2ASziD9pP_tvi4xXUHsQfsxoBP1dse12HUNkY_fNyiKwddtHf_uUKn7dN7uUur1-d9ualSzQs6pY5Q7TJHFRgCOSW5YvNLBtowUgjTFkIoaYqidcbMuyxMayXInBmVE6s1X6GHP64OY4zBuuYcfA_hp6GkWSw0i4WGy2axwH8B1uhOzw</recordid><startdate>19980401</startdate><enddate>19980401</enddate><creator>Tatsumi, Tetsuya</creator><creator>Hayashi, Hisataka</creator><creator>Morishita, Satoshi</creator><creator>Noda, Shuichi</creator><creator>Okigawa, Mitsuru</creator><creator>Itabashi, Naoshi</creator><creator>Hikosaka, Yukinobu</creator><creator>Inoue, Masami</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980401</creationdate><title>Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing</title><author>Tatsumi, Tetsuya ; Hayashi, Hisataka ; Morishita, Satoshi ; Noda, Shuichi ; Okigawa, Mitsuru ; Itabashi, Naoshi ; Hikosaka, Yukinobu ; Inoue, Masami</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-f01cf5f19ad0a6106923472acd2084db84497d88bfdd47278dbe7a762d960ecc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tatsumi, Tetsuya</creatorcontrib><creatorcontrib>Hayashi, Hisataka</creatorcontrib><creatorcontrib>Morishita, Satoshi</creatorcontrib><creatorcontrib>Noda, Shuichi</creatorcontrib><creatorcontrib>Okigawa, Mitsuru</creatorcontrib><creatorcontrib>Itabashi, Naoshi</creatorcontrib><creatorcontrib>Hikosaka, Yukinobu</creatorcontrib><creatorcontrib>Inoue, Masami</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tatsumi, Tetsuya</au><au>Hayashi, Hisataka</au><au>Morishita, Satoshi</au><au>Noda, Shuichi</au><au>Okigawa, Mitsuru</au><au>Itabashi, Naoshi</au><au>Hikosaka, Yukinobu</au><au>Inoue, Masami</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-04-01</date><risdate>1998</risdate><volume>37</volume><issue>4S</issue><spage>2394</spage><pages>2394-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The radicals of capacitive plasmas actually used in mass production were analyzed
using various measurement systems. The composition of radicals in bulk plasma depends on the
gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent
gas (C
4
F
8
) is dissociated by multiple collision with electrons according to τ·
n
e
<σ
v
>,
where τ is the residence time,
n
e
is the electron density, σ is the dissociation collision cross
section and
v
is the electron velocity. A high-performance etching process, which can realize
0.09 µmφ contact holes with aspect ratio of 11, was achieved using a short residence time to
suppress the excess dissociation and the control of deposition species through the addition of O
2
to C
4
F
8
/Ar plasma as well as the reduction of the density of F radicals through the reaction with
the Si wall.</abstract><doi>10.1143/JJAP.37.2394</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998-04, Vol.37 (4S), p.2394 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_2394 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing |
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