Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching

The effects of the “electron shading” charge build-up at the bottom of holes are investigated using fluorocarbon gas plasma. The etch rates of the electrically conductive films such as phosphorus-doped polysilicon at the bottom of the holes change depending on whether the films are patterned or not....

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-04, Vol.37 (4S), p.2314
Hauptverfasser:	Yonekura, Kazumasa, Kiritani, Masahide, Sakamori, Shigenori, Yokoi, Takahiro, Fujiwara, Nobuo, Miyatake, Hiroshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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