Nitrogen Doping Effect on Phase Change Optical Disks

The nitrogen doping effect on the Ge–Sb–Te recording layer was quantitatively examined. We succeeded in the quantitative analysis of the nitrogen concentration in the Ge–Sb–Te–(N) recording layer by secondary ion mass spectrometry (SIMS) observation. The nitrogen concentration could be finely contro...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-04, Vol.37 (4S), p.2098
Hauptverfasser:	Kojima, Rie, Okabayashi, Shoichi, Kashihara, Toshiaki, Horai, Keiichiro, Matsunaga, Toshiyuki, Ohno, Eiji, Yamada, Noboru, Ohta, Takeo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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