Characterization of thin bonded silicon-on-insulator structures by the microwave photoconductivity decay method

Thin silicon-on-insulator (SOI) layers of 0.5–2 µ m thickness are characterized by the microwave photoconductivity decay (µ-PCD) method with an N 2 laser as the excitation source. The penetration depth of the N 2 laser light is less than 0.1 µ m, and thus the excess carriers are excited only in the...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1997-07, Vol.36 (7A), p.L839-L841
Hauptverfasser:	ICHIMURA, M, MAKINO, T, ASAKURA, H, USAMI, A, MORITA, E, ARAI, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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