Nonradiative investigation of hole photoionization spectrum of EL2 in carbon concentration controlled semi-insulating GaAs

Nonradiative investigation of hole photoionization spectrum of EL2 in carbon concentration controlled semi-insulating GaAs

Piezoelectric photoacoustic (PPA) measurements were carried out before and after secondary light illumination to investigate EL2 in carbon concentration controlled semi-insulating (SI) GaAs. The PPA spectra before secondary light illumination show a broad peak around 0.95 eV and a hump up to the ban...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-06, Vol.36 (6A), p.L650-L653
Hauptverfasser: FUKUYAMA, A, MOROOKA, Y, AKASHI, Y, YOSHINO, K, MAEDA, K, IKARI, T
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Sprache:eng
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Physics
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container_end_page L653
container_issue 6A
container_start_page L650
container_title Japanese Journal of Applied Physics
container_volume 36
creator FUKUYAMA, A
MOROOKA, Y
AKASHI, Y
YOSHINO, K
MAEDA, K
IKARI, T
description Piezoelectric photoacoustic (PPA) measurements were carried out before and after secondary light illumination to investigate EL2 in carbon concentration controlled semi-insulating (SI) GaAs. The PPA spectra before secondary light illumination show a broad peak around 0.95 eV and a hump up to the band gap energy and are attributed to hole and electron photoionizations of EL2, respectively. The photoionization spectra of EL2 were obtained from PPA measurements. We also found that the hole photoionization of EL2 is not influenced by secondary light illumination even after a long period of illumination.
doi_str_mv 10.1143/jjap.36.L650
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Physics
title Nonradiative investigation of hole photoionization spectrum of EL2 in carbon concentration controlled semi-insulating GaAs
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