2 S/mm transconductance InAs-inserted-channel modulation doped field effect transistors with a very close gate-to-channel separation of 14.5 nm

We have achieved a very small gate-to-channel separation d gi +Δ d of 14.5 nm for InAs-inserted-channel modulation doped field effect transistors (InAs-MODFETs) with the optimum control of wet-chemically recessed groove for gate electrodes. Excellent output characteristics as well as high channel cu...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1997-04, Vol.36 (4B), p.L470-L472
Hauptverfasser:	XU, D, HEISS, H, SEXL, M, KRAUS, S, BÖHM, G, TRÄNKLE, G, WEIMANN, G, ABSTREITER, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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