Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N 2 O
Plasma etching induced electrical degradation in metal-oxide-silicon (MOS) capacitors is dramatically reduced by a gate oxide formed in O 2 using a furnace and followed by rapid thermal annealing in N 2 O. The plasma etching induced reduction of charge-to-breakdown value in MOS capacitors is minimiz...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1997-12, Vol.36 (12A), p.L1580 |
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| Sprache: | eng |
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| container_issue | 12A |
| container_start_page | L1580 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 36 |
| creator | Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao Pei-Jer Tzeng, Pei-Jer Tzeng |
| description | Plasma etching induced electrical degradation in metal-oxide-silicon (MOS) capacitors is dramatically reduced by a gate oxide formed in O
2
using a furnace and followed by rapid thermal annealing in N
2
O. The plasma etching induced reduction of charge-to-breakdown value in MOS capacitors is minimized using this technique. The plasma etching induced flatband voltage shift is significantly reduced. The electrical improvement can be explained in terms of a mechanism based on the relaxation of SiO
2
/Si interfacial strain. |
| doi_str_mv | 10.1143/JJAP.36.L1580 |
| format | Article |
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2
using a furnace and followed by rapid thermal annealing in N
2
O. The plasma etching induced reduction of charge-to-breakdown value in MOS capacitors is minimized using this technique. The plasma etching induced flatband voltage shift is significantly reduced. The electrical improvement can be explained in terms of a mechanism based on the relaxation of SiO
2
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2
using a furnace and followed by rapid thermal annealing in N
2
O. The plasma etching induced reduction of charge-to-breakdown value in MOS capacitors is minimized using this technique. The plasma etching induced flatband voltage shift is significantly reduced. The electrical improvement can be explained in terms of a mechanism based on the relaxation of SiO
2
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2
using a furnace and followed by rapid thermal annealing in N
2
O. The plasma etching induced reduction of charge-to-breakdown value in MOS capacitors is minimized using this technique. The plasma etching induced flatband voltage shift is significantly reduced. The electrical improvement can be explained in terms of a mechanism based on the relaxation of SiO
2
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1997-12, Vol.36 (12A), p.L1580 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_36_L1580 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N 2 O |
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