Hysteretic Current–Voltage Characteristics for a-Axis Oriented Grain in Y 1 Ba 2 Cu 3 O 7-δ Films
We observed a hysteretic current–voltage ( I–V ) characteristic on lateral type intrinsic Josephson junction using Y 1 Ba 2 Cu 3 O 7-δ films. An a -axis oriented needle-like grain surrounded by c -axis oriented grains is used for the junctions. The junctions using as-grown films show resistively shu...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1997-12, Vol.36 (12R), p.7173 |
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| container_issue | 12R |
| container_start_page | 7173 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 36 |
| creator | Yoshihiro Ishimaru, Yoshihiro Ishimaru Youichi Enomoto, Youichi Enomoto |
| description | We observed a hysteretic current–voltage (
I–V
) characteristic on lateral type intrinsic Josephson junction using Y
1
Ba
2
Cu
3
O
7-δ
films. An
a
-axis oriented needle-like grain surrounded by
c
-axis oriented grains is used for the junctions. The junctions using as-grown films show resistively shunted junction (RSJ) type
I–V
characteristics. After appropriate annealing in pure Ar-gas, this junction property changes to hysteretic
I–V
characteristics with several voltage jumps from no hysteresis. It is explained that conductivity of the CuO chain decreases by the annealing. |
| doi_str_mv | 10.1143/JJAP.36.7173 |
| format | Article |
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I–V
) characteristic on lateral type intrinsic Josephson junction using Y
1
Ba
2
Cu
3
O
7-δ
films. An
a
-axis oriented needle-like grain surrounded by
c
-axis oriented grains is used for the junctions. The junctions using as-grown films show resistively shunted junction (RSJ) type
I–V
characteristics. After appropriate annealing in pure Ar-gas, this junction property changes to hysteretic
I–V
characteristics with several voltage jumps from no hysteresis. It is explained that conductivity of the CuO chain decreases by the annealing.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.36.7173</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1997-12, Vol.36 (12R), p.7173</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c803-c6aedeacdb34b50c5308985e7f55dae3119bada647fe7539093aa90d03e0bc813</citedby><cites>FETCH-LOGICAL-c803-c6aedeacdb34b50c5308985e7f55dae3119bada647fe7539093aa90d03e0bc813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Yoshihiro Ishimaru, Yoshihiro Ishimaru</creatorcontrib><creatorcontrib>Youichi Enomoto, Youichi Enomoto</creatorcontrib><title>Hysteretic Current–Voltage Characteristics for a-Axis Oriented Grain in Y 1 Ba 2 Cu 3 O 7-δ Films</title><title>Japanese Journal of Applied Physics</title><description>We observed a hysteretic current–voltage (
I–V
) characteristic on lateral type intrinsic Josephson junction using Y
1
Ba
2
Cu
3
O
7-δ
films. An
a
-axis oriented needle-like grain surrounded by
c
-axis oriented grains is used for the junctions. The junctions using as-grown films show resistively shunted junction (RSJ) type
I–V
characteristics. After appropriate annealing in pure Ar-gas, this junction property changes to hysteretic
I–V
characteristics with several voltage jumps from no hysteresis. It is explained that conductivity of the CuO chain decreases by the annealing.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkE9KAzEYxYMoWKs7D_AdwNRkvmQys6yDbS2FuiiCq-GbJKOR_pFkBLvzDl7Fc3gIT-IUhQePx3u8xY-xSylGUiq8ns_H9yPMR0YaPGIDicpwJXJ9zAZCZJKrMstO2VlKL33MtZID5mb71Pnou2CheovRb7ufj8-H3bqjJw_VM0WyfR9SP0jQ7iIQH7-HBMsY-q13MI0UttDrESTcEGT9DyAswfDvL5iE9Sads5OW1slf_PuQrSa3q2rGF8vpXTVecFsI5DYn7zxZ16BqtLAaRVEW2ptWa0cepSwbcpQr03qjsRQlEpXCCfSisYXEIbv6u7Vxl1L0bf0aw4bivpaiPgCqD4BqzOsDIPwF5CxZHA</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Yoshihiro Ishimaru, Yoshihiro Ishimaru</creator><creator>Youichi Enomoto, Youichi Enomoto</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19971201</creationdate><title>Hysteretic Current–Voltage Characteristics for a-Axis Oriented Grain in Y 1 Ba 2 Cu 3 O 7-δ Films</title><author>Yoshihiro Ishimaru, Yoshihiro Ishimaru ; Youichi Enomoto, Youichi Enomoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c803-c6aedeacdb34b50c5308985e7f55dae3119bada647fe7539093aa90d03e0bc813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshihiro Ishimaru, Yoshihiro Ishimaru</creatorcontrib><creatorcontrib>Youichi Enomoto, Youichi Enomoto</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshihiro Ishimaru, Yoshihiro Ishimaru</au><au>Youichi Enomoto, Youichi Enomoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hysteretic Current–Voltage Characteristics for a-Axis Oriented Grain in Y 1 Ba 2 Cu 3 O 7-δ Films</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1997-12-01</date><risdate>1997</risdate><volume>36</volume><issue>12R</issue><spage>7173</spage><pages>7173-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We observed a hysteretic current–voltage (
I–V
) characteristic on lateral type intrinsic Josephson junction using Y
1
Ba
2
Cu
3
O
7-δ
films. An
a
-axis oriented needle-like grain surrounded by
c
-axis oriented grains is used for the junctions. The junctions using as-grown films show resistively shunted junction (RSJ) type
I–V
characteristics. After appropriate annealing in pure Ar-gas, this junction property changes to hysteretic
I–V
characteristics with several voltage jumps from no hysteresis. It is explained that conductivity of the CuO chain decreases by the annealing.</abstract><doi>10.1143/JJAP.36.7173</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1997-12, Vol.36 (12R), p.7173 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_36_7173 |
| source | Institute of Physics Journals |
| title | Hysteretic Current–Voltage Characteristics for a-Axis Oriented Grain in Y 1 Ba 2 Cu 3 O 7-δ Films |
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