Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy
Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were c...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1997-06, Vol.36 (6B), p.4199-4203 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4203 |
|---|---|
| container_issue | 6B |
| container_start_page | 4199 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 36 |
| creator | NASHIKI, H SUEMUNE, I SUZUKI, H UESUGI, K |
| description | Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were clearly observed. It was found that the luminescence efficiency of localized excitons was very high, probably nearly 100%. The thermalization of localized excitons to free excitons with the increase of temperature leads to a blue shift of the PL peak energy and an abrupt decrease of the luminescence intensity. This decrease of the luminescence intensity is attributed to the capture of free excitons by nonradiative centers. A SL which shows luminescence from continuously distributed tailed states exhibited a temperature dependence much different from that of the above SLs which show luminescence from the localized excitons defined by the interface fluctuations. |
| doi_str_mv | 10.1143/JJAP.36.4199 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_36_4199</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2748146</sourcerecordid><originalsourceid>FETCH-LOGICAL-c410t-df5292b7b3235978d20e4095cc5252e7ff1567f7e75cd346558be0051edc5aab3</originalsourceid><addsrcrecordid>eNo9kLtOwzAYhS0EEqWw8QAeGEnra9KMFeJWFYFUWFgix_ldjFI7sl1oeASempYipqMjfecMH0LnlIwoFXw8m02fRjwfCVqWB2hAuSgyQXJ5iAaEMJqJkrFjdBLj-7bmUtAB-p6vV9ZB1OA0YG8wbLRN3kXceq1a-wUNrnu88s63qoeArUsQjNrCpl3rtFbJ7mjr8KtbwPhhucBx3UFoVUpWQ8TL4D_d7wck1fqwVM5q_KE6H3D3piJg6GxSm_4UHRnVRjj7yyF6ubl-vrrL5o-391fTeaYFJSlrjGQlq4uaMy7LYtIwAoKUUmvJJIPCGCrzwhRQSN1wkUs5qYEQSaHRUqmaD9Hl_lcHH2MAU3XBrlToK0qqncdq57HiebXzuMUv9nin4taICcppG_83rBATKnL-A3ppdjs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>NASHIKI, H ; SUEMUNE, I ; SUZUKI, H ; UESUGI, K</creator><creatorcontrib>NASHIKI, H ; SUEMUNE, I ; SUZUKI, H ; UESUGI, K</creatorcontrib><description>Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were clearly observed. It was found that the luminescence efficiency of localized excitons was very high, probably nearly 100%. The thermalization of localized excitons to free excitons with the increase of temperature leads to a blue shift of the PL peak energy and an abrupt decrease of the luminescence intensity. This decrease of the luminescence intensity is attributed to the capture of free excitons by nonradiative centers. A SL which shows luminescence from continuously distributed tailed states exhibited a temperature dependence much different from that of the above SLs which show luminescence from the localized excitons defined by the interface fluctuations.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.36.4199</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) ; Collective excitations (including plasmons and other charge-density excitations) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Ii-vi semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Surface and interface electron states</subject><ispartof>Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.4199-4203</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-df5292b7b3235978d20e4095cc5252e7ff1567f7e75cd346558be0051edc5aab3</citedby><cites>FETCH-LOGICAL-c410t-df5292b7b3235978d20e4095cc5252e7ff1567f7e75cd346558be0051edc5aab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2748146$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>NASHIKI, H</creatorcontrib><creatorcontrib>SUEMUNE, I</creatorcontrib><creatorcontrib>SUZUKI, H</creatorcontrib><creatorcontrib>UESUGI, K</creatorcontrib><title>Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy</title><title>Japanese Journal of Applied Physics</title><description>Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were clearly observed. It was found that the luminescence efficiency of localized excitons was very high, probably nearly 100%. The thermalization of localized excitons to free excitons with the increase of temperature leads to a blue shift of the PL peak energy and an abrupt decrease of the luminescence intensity. This decrease of the luminescence intensity is attributed to the capture of free excitons by nonradiative centers. A SL which shows luminescence from continuously distributed tailed states exhibited a temperature dependence much different from that of the above SLs which show luminescence from the localized excitons defined by the interface fluctuations.</description><subject>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)</subject><subject>Collective excitations (including plasmons and other charge-density excitations)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Ii-vi semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Surface and interface electron states</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kLtOwzAYhS0EEqWw8QAeGEnra9KMFeJWFYFUWFgix_ldjFI7sl1oeASempYipqMjfecMH0LnlIwoFXw8m02fRjwfCVqWB2hAuSgyQXJ5iAaEMJqJkrFjdBLj-7bmUtAB-p6vV9ZB1OA0YG8wbLRN3kXceq1a-wUNrnu88s63qoeArUsQjNrCpl3rtFbJ7mjr8KtbwPhhucBx3UFoVUpWQ8TL4D_d7wck1fqwVM5q_KE6H3D3piJg6GxSm_4UHRnVRjj7yyF6ubl-vrrL5o-391fTeaYFJSlrjGQlq4uaMy7LYtIwAoKUUmvJJIPCGCrzwhRQSN1wkUs5qYEQSaHRUqmaD9Hl_lcHH2MAU3XBrlToK0qqncdq57HiebXzuMUv9nin4taICcppG_83rBATKnL-A3ppdjs</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>NASHIKI, H</creator><creator>SUEMUNE, I</creator><creator>SUZUKI, H</creator><creator>UESUGI, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970601</creationdate><title>Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy</title><author>NASHIKI, H ; SUEMUNE, I ; SUZUKI, H ; UESUGI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-df5292b7b3235978d20e4095cc5252e7ff1567f7e75cd346558be0051edc5aab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)</topic><topic>Collective excitations (including plasmons and other charge-density excitations)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Ii-vi semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Surface and interface electron states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NASHIKI, H</creatorcontrib><creatorcontrib>SUEMUNE, I</creatorcontrib><creatorcontrib>SUZUKI, H</creatorcontrib><creatorcontrib>UESUGI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NASHIKI, H</au><au>SUEMUNE, I</au><au>SUZUKI, H</au><au>UESUGI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1997-06-01</date><risdate>1997</risdate><volume>36</volume><issue>6B</issue><spage>4199</spage><epage>4203</epage><pages>4199-4203</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were clearly observed. It was found that the luminescence efficiency of localized excitons was very high, probably nearly 100%. The thermalization of localized excitons to free excitons with the increase of temperature leads to a blue shift of the PL peak energy and an abrupt decrease of the luminescence intensity. This decrease of the luminescence intensity is attributed to the capture of free excitons by nonradiative centers. A SL which shows luminescence from continuously distributed tailed states exhibited a temperature dependence much different from that of the above SLs which show luminescence from the localized excitons defined by the interface fluctuations.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.36.4199</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.4199-4203 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_36_4199 |
| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| subjects | Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) Collective excitations (including plasmons and other charge-density excitations) Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Ii-vi semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Surface and interface electron states |
| title | Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T19%3A32%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Luminescence%20of%20excitons%20localized%20by%20monolayer%20interface%20fluctuations%20in%20ZnSe/MgS%20superlattices%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=NASHIKI,%20H&rft.date=1997-06-01&rft.volume=36&rft.issue=6B&rft.spage=4199&rft.epage=4203&rft.pages=4199-4203&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/JJAP.36.4199&rft_dat=%3Cpascalfrancis_cross%3E2748146%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |