Experimental surface acoustic wave properties of AlN thin films on sapphire substrates
Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1997, Vol.36 (1A), p.307-312 |
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container_title | Japanese Journal of Applied Physics |
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creator | KAYA, K TAKAHASHI, H SHIBATA, Y KANNO, Y HIRAI, T |
description | Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at
k
h
≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios. |
doi_str_mv | 10.1143/JJAP.36.307 |
format | Article |
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k
h
≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.36.307</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Physics ; Piezoelectricity and electromechanical effects</subject><ispartof>Japanese Journal of Applied Physics, 1997, Vol.36 (1A), p.307-312</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</citedby><cites>FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2553478$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KAYA, K</creatorcontrib><creatorcontrib>TAKAHASHI, H</creatorcontrib><creatorcontrib>SHIBATA, Y</creatorcontrib><creatorcontrib>KANNO, Y</creatorcontrib><creatorcontrib>HIRAI, T</creatorcontrib><title>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</title><title>Japanese Journal of Applied Physics</title><description>Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at
k
h
≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</description><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Piezoelectricity and electromechanical effects</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqGw4ge8YIcSbI8f6bKqSqGqgAWwjRzXVo3SJLJdHn-PqyJW89C9ozsHoWtKKko53K1Ws5cKZAVEnaCCAlclJ1KcooIQRks-ZewcXcT4kUcpOC3Q--J7tMHvbJ90h-M-OG0s1mbYx-QN_tKfFo9hyJrkbcSDw7PuCaet77Hz3S5vehz1OG59sNnexhR0svESnTndRXv1Vyfo7X7xOn8o18_Lx_lsXRqoIeVwjAtQVjNmKHVOWAOSydrWQimVey1gA6QWXBrZQmuBUAl0qtrWbFjNYIJuj3dNGGIM1jVjfkaHn4aS5oCkOSBpQDYZSVbfHNWjjkZ3Luje-PhvYUJkYjX8AnC6YNg</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>KAYA, K</creator><creator>TAKAHASHI, H</creator><creator>SHIBATA, Y</creator><creator>KANNO, Y</creator><creator>HIRAI, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1997</creationdate><title>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</title><author>KAYA, K ; TAKAHASHI, H ; SHIBATA, Y ; KANNO, Y ; HIRAI, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Piezoelectricity and electromechanical effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAYA, K</creatorcontrib><creatorcontrib>TAKAHASHI, H</creatorcontrib><creatorcontrib>SHIBATA, Y</creatorcontrib><creatorcontrib>KANNO, Y</creatorcontrib><creatorcontrib>HIRAI, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAYA, K</au><au>TAKAHASHI, H</au><au>SHIBATA, Y</au><au>KANNO, Y</au><au>HIRAI, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1997</date><risdate>1997</risdate><volume>36</volume><issue>1A</issue><spage>307</spage><epage>312</epage><pages>307-312</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at
k
h
≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.36.307</doi><tpages>6</tpages></addata></record> |
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subjects | Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Physics Piezoelectricity and electromechanical effects |
title | Experimental surface acoustic wave properties of AlN thin films on sapphire substrates |
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