Experimental surface acoustic wave properties of AlN thin films on sapphire substrates

Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997, Vol.36 (1A), p.307-312
Hauptverfasser: KAYA, K, TAKAHASHI, H, SHIBATA, Y, KANNO, Y, HIRAI, T
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container_issue 1A
container_start_page 307
container_title Japanese Journal of Applied Physics
container_volume 36
creator KAYA, K
TAKAHASHI, H
SHIBATA, Y
KANNO, Y
HIRAI, T
description Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_36_307</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2553478</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRS0EEqGw4ge8YIcSbI8f6bKqSqGqgAWwjRzXVo3SJLJdHn-PqyJW89C9ozsHoWtKKko53K1Ws5cKZAVEnaCCAlclJ1KcooIQRks-ZewcXcT4kUcpOC3Q--J7tMHvbJ90h-M-OG0s1mbYx-QN_tKfFo9hyJrkbcSDw7PuCaet77Hz3S5vehz1OG59sNnexhR0svESnTndRXv1Vyfo7X7xOn8o18_Lx_lsXRqoIeVwjAtQVjNmKHVOWAOSydrWQimVey1gA6QWXBrZQmuBUAl0qtrWbFjNYIJuj3dNGGIM1jVjfkaHn4aS5oCkOSBpQDYZSVbfHNWjjkZ3Luje-PhvYUJkYjX8AnC6YNg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>KAYA, K ; TAKAHASHI, H ; SHIBATA, Y ; KANNO, Y ; HIRAI, T</creator><creatorcontrib>KAYA, K ; TAKAHASHI, H ; SHIBATA, Y ; KANNO, Y ; HIRAI, T</creatorcontrib><description>Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.36.307</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Physics ; Piezoelectricity and electromechanical effects</subject><ispartof>Japanese Journal of Applied Physics, 1997, Vol.36 (1A), p.307-312</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</citedby><cites>FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2553478$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KAYA, K</creatorcontrib><creatorcontrib>TAKAHASHI, H</creatorcontrib><creatorcontrib>SHIBATA, Y</creatorcontrib><creatorcontrib>KANNO, Y</creatorcontrib><creatorcontrib>HIRAI, T</creatorcontrib><title>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</title><title>Japanese Journal of Applied Physics</title><description>Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</description><subject>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Piezoelectricity and electromechanical effects</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqGw4ge8YIcSbI8f6bKqSqGqgAWwjRzXVo3SJLJdHn-PqyJW89C9ozsHoWtKKko53K1Ws5cKZAVEnaCCAlclJ1KcooIQRks-ZewcXcT4kUcpOC3Q--J7tMHvbJ90h-M-OG0s1mbYx-QN_tKfFo9hyJrkbcSDw7PuCaet77Hz3S5vehz1OG59sNnexhR0svESnTndRXv1Vyfo7X7xOn8o18_Lx_lsXRqoIeVwjAtQVjNmKHVOWAOSydrWQimVey1gA6QWXBrZQmuBUAl0qtrWbFjNYIJuj3dNGGIM1jVjfkaHn4aS5oCkOSBpQDYZSVbfHNWjjkZ3Luje-PhvYUJkYjX8AnC6YNg</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>KAYA, K</creator><creator>TAKAHASHI, H</creator><creator>SHIBATA, Y</creator><creator>KANNO, Y</creator><creator>HIRAI, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1997</creationdate><title>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</title><author>KAYA, K ; TAKAHASHI, H ; SHIBATA, Y ; KANNO, Y ; HIRAI, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-4024537ea22c11ff5ec36268e85777c36a53d308546c6b3be30163197bbcd2823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Piezoelectricity and electromechanical effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAYA, K</creatorcontrib><creatorcontrib>TAKAHASHI, H</creatorcontrib><creatorcontrib>SHIBATA, Y</creatorcontrib><creatorcontrib>KANNO, Y</creatorcontrib><creatorcontrib>HIRAI, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAYA, K</au><au>TAKAHASHI, H</au><au>SHIBATA, Y</au><au>KANNO, Y</au><au>HIRAI, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental surface acoustic wave properties of AlN thin films on sapphire substrates</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1997</date><risdate>1997</risdate><volume>36</volume><issue>1A</issue><spage>307</spage><epage>312</epage><pages>307-312</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AlN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at k h ≧2, and the static capacitance was 46.3 pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.36.307</doi><tpages>6</tpages></addata></record>
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
Piezoelectricity and electromechanical effects
title Experimental surface acoustic wave properties of AlN thin films on sapphire substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T06%3A09%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20surface%20acoustic%20wave%20properties%20of%20AlN%20thin%20films%20on%20sapphire%20substrates&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=KAYA,%20K&rft.date=1997&rft.volume=36&rft.issue=1A&rft.spage=307&rft.epage=312&rft.pages=307-312&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/JJAP.36.307&rft_dat=%3Cpascalfrancis_cross%3E2553478%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true