Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma
Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a hi...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1997-04, Vol.36 (4B), p.2526-2532 |
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Format: | Artikel |
Sprache: | eng |
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