Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma

Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a hi...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-04, Vol.36 (4B), p.2526-2532
Hauptverfasser: MARUYAMA, T, FUJIWARA, N, OGINO, S, YONEDA, M
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Sprache:eng
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