Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma
Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a hi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1997-04, Vol.36 (4B), p.2526-2532 |
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| container_end_page | 2532 |
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| container_issue | 4B |
| container_start_page | 2526 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 36 |
| creator | MARUYAMA, T FUJIWARA, N OGINO, S YONEDA, M |
| description | Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up. |
| doi_str_mv | 10.1143/jjap.36.2526 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_36_2526</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2766471</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-c23392339ecfb8ae65defef174a7183b508910ac865684f4b3fdedb5c35b81463</originalsourceid><addsrcrecordid>eNo9kEtLw0AUhQdRsFZ3_oBZuHTivDNdluKrFBRRXIbJ5E6TkjbDTELpvze14uJy74XvHA4HoVtGM8akeNhsbMiEzrji-gxNmJA5kVSrczShlDMiZ5xfoquUNuOrlWQT9P0B1eD6ptvhzmNX27gGXA5NW5Eh4H3T17hu1jUJ3R4iDkOboMLQguvjKHEH13a_V4TU7ezOAQ6tTVt7jS68HeGbvz1FX0-Pn4sXsnp7fl3MV8QJbnriuBCz44DzpbGgVQUePMulzZkRpaJmxqh1RittpJel8BVUpXJClYZJLabo_uTrYpdSBF-E2GxtPBSMFsdSiuVy_l4IXRxLGfG7Ex5scrb1cYzcpH8Nz7WWORM_nfBjRQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma</title><source>Institute of Physics Journals</source><creator>MARUYAMA, T ; FUJIWARA, N ; OGINO, S ; YONEDA, M</creator><creatorcontrib>MARUYAMA, T ; FUJIWARA, N ; OGINO, S ; YONEDA, M</creatorcontrib><description>Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.36.2526</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1997-04, Vol.36 (4B), p.2526-2532</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-c23392339ecfb8ae65defef174a7183b508910ac865684f4b3fdedb5c35b81463</citedby><cites>FETCH-LOGICAL-c328t-c23392339ecfb8ae65defef174a7183b508910ac865684f4b3fdedb5c35b81463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2766471$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MARUYAMA, T</creatorcontrib><creatorcontrib>FUJIWARA, N</creatorcontrib><creatorcontrib>OGINO, S</creatorcontrib><creatorcontrib>YONEDA, M</creatorcontrib><title>Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma</title><title>Japanese Journal of Applied Physics</title><description>Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLw0AUhQdRsFZ3_oBZuHTivDNdluKrFBRRXIbJ5E6TkjbDTELpvze14uJy74XvHA4HoVtGM8akeNhsbMiEzrji-gxNmJA5kVSrczShlDMiZ5xfoquUNuOrlWQT9P0B1eD6ptvhzmNX27gGXA5NW5Eh4H3T17hu1jUJ3R4iDkOboMLQguvjKHEH13a_V4TU7ezOAQ6tTVt7jS68HeGbvz1FX0-Pn4sXsnp7fl3MV8QJbnriuBCz44DzpbGgVQUePMulzZkRpaJmxqh1RittpJel8BVUpXJClYZJLabo_uTrYpdSBF-E2GxtPBSMFsdSiuVy_l4IXRxLGfG7Ex5scrb1cYzcpH8Nz7WWORM_nfBjRQ</recordid><startdate>19970401</startdate><enddate>19970401</enddate><creator>MARUYAMA, T</creator><creator>FUJIWARA, N</creator><creator>OGINO, S</creator><creator>YONEDA, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970401</creationdate><title>Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma</title><author>MARUYAMA, T ; FUJIWARA, N ; OGINO, S ; YONEDA, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-c23392339ecfb8ae65defef174a7183b508910ac865684f4b3fdedb5c35b81463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MARUYAMA, T</creatorcontrib><creatorcontrib>FUJIWARA, N</creatorcontrib><creatorcontrib>OGINO, S</creatorcontrib><creatorcontrib>YONEDA, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MARUYAMA, T</au><au>FUJIWARA, N</au><au>OGINO, S</au><au>YONEDA, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1997-04-01</date><risdate>1997</risdate><volume>36</volume><issue>4B</issue><spage>2526</spage><epage>2532</epage><pages>2526-2532</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.36.2526</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1997-04, Vol.36 (4B), p.2526-2532 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_36_2526 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T08%3A42%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reduction%20of%20charge%20build-up%20with%20high-power%20pulsed%20electron%20cyclotron%20resonance%20plasma&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=MARUYAMA,%20T&rft.date=1997-04-01&rft.volume=36&rft.issue=4B&rft.spage=2526&rft.epage=2532&rft.pages=2526-2532&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.36.2526&rft_dat=%3Cpascalfrancis_cross%3E2766471%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |