Hydrogen passivation on the grain boundary and intragranular defects in various polysilicon thin-film transistors

We investigated the hydrogenation effects on two types of trap states in poly-Si thin-film transistors (TFT's), where the gate oxide thickness was varied from 1000 Å to 4000 Å and the active poly-Si layers were altered by different annealing methods. The decrease of threshold voltage, which is...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996, Vol.35 (2B), p.915-918
Hauptverfasser:	CHOI, K.-Y, YOO, J.-S, HAN, M.-K, KIM, Y.-S
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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