Nanofabrication with a novel EB system with a large and stable beam current

We describe nanofabrication using a novel electron beam (EB) system that has a large and stable beam current, combined with high resolution resists. This system has a low aberration objective lens and a Zr/O/W cathode that provides a probe current of 1.2 nA. By detecting Si-groove marks, the system...

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Veröffentlicht in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12B), p.6421-6425
Hauptverfasser: YOSHIMURA, T, OHTA, H, YAMAMOTO, J, UCHINO, S.-I, GOTOH, Y, TERASAWA, T
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container_end_page 6425
container_issue 12B
container_start_page 6421
container_title Japanese Journal of Applied Physics
container_volume 35
creator YOSHIMURA, T
OHTA, H
YAMAMOTO, J
UCHINO, S.-I
GOTOH, Y
TERASAWA, T
description We describe nanofabrication using a novel electron beam (EB) system that has a large and stable beam current, combined with high resolution resists. This system has a low aberration objective lens and a Zr/O/W cathode that provides a probe current of 1.2 nA. By detecting Si-groove marks, the system achieves high overlay accuracy of within 10 nm ( mean+3σ) over large areas. We have realized resist nanofabrication down to 10 nm with small nano edge roughness. By introducing a hard mask consisting of a thin (25 nm) SiO 2 layer, we have also obtained a poly-Si gate structure of 30 nm on a thin (4 nm) gate oxide.
doi_str_mv 10.1143/jjap.35.6421
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Nanofabrication with a novel EB system with a large and stable beam current
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