Chemical Treatment Effect of Si(111) Surfaces in H 2 SO 4 :H 2 O 2 Solution
Chemically treated Si(111) surfaces in an H 2 SO 4 :H 2 O 2 =4:1 (sulphuric peroxide mixture; SPM) solution at 80° C have been studied using spectroellipsometry (SE), ex situ atomic force microscopy (AFM) and contact-angle measurement techniques. The SE data clearly indicate that the solution causes...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996-12, Vol.35 (12R), p.5925 |
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| container_issue | 12R |
| container_start_page | 5925 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | Kobayashi, Kazuyuki Unno, Hiroyuki Takizawa, Hidekazu Sadao Adachi, Sadao Adachi |
| description | Chemically treated Si(111) surfaces in an H
2
SO
4
:H
2
O
2
=4:1 (sulphuric peroxide mixture; SPM) solution at 80° C have been studied using spectroellipsometry (SE),
ex situ
atomic force microscopy (AFM) and contact-angle measurement techniques. The SE data clearly indicate that the solution causes in surface chemical oxidation. The oxidation occurs immediately upon immersing the sample in the solution. The thickness of the chemical oxide layer shows a nearly saturated value of ∼14 Å. The SE data also indicate that the chemical oxidation and subsequent HF etching result in surface smoothing, in reasonable agreement with the AFM results. The SPM-treated surface is found to be highly hydrophilic. |
| doi_str_mv | 10.1143/JJAP.35.5925 |
| format | Article |
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2
SO
4
:H
2
O
2
=4:1 (sulphuric peroxide mixture; SPM) solution at 80° C have been studied using spectroellipsometry (SE),
ex situ
atomic force microscopy (AFM) and contact-angle measurement techniques. The SE data clearly indicate that the solution causes in surface chemical oxidation. The oxidation occurs immediately upon immersing the sample in the solution. The thickness of the chemical oxide layer shows a nearly saturated value of ∼14 Å. The SE data also indicate that the chemical oxidation and subsequent HF etching result in surface smoothing, in reasonable agreement with the AFM results. The SPM-treated surface is found to be highly hydrophilic.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.5925</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1996-12, Vol.35 (12R), p.5925</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c805-cb76bf216b798c85e7a869a3019c992d9679378b44c8b4689451e964132b4c4a3</citedby><cites>FETCH-LOGICAL-c805-cb76bf216b798c85e7a869a3019c992d9679378b44c8b4689451e964132b4c4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Kobayashi, Kazuyuki</creatorcontrib><creatorcontrib>Unno, Hiroyuki</creatorcontrib><creatorcontrib>Takizawa, Hidekazu</creatorcontrib><creatorcontrib>Sadao Adachi, Sadao Adachi</creatorcontrib><title>Chemical Treatment Effect of Si(111) Surfaces in H 2 SO 4 :H 2 O 2 Solution</title><title>Japanese Journal of Applied Physics</title><description>Chemically treated Si(111) surfaces in an H
2
SO
4
:H
2
O
2
=4:1 (sulphuric peroxide mixture; SPM) solution at 80° C have been studied using spectroellipsometry (SE),
ex situ
atomic force microscopy (AFM) and contact-angle measurement techniques. The SE data clearly indicate that the solution causes in surface chemical oxidation. The oxidation occurs immediately upon immersing the sample in the solution. The thickness of the chemical oxide layer shows a nearly saturated value of ∼14 Å. The SE data also indicate that the chemical oxidation and subsequent HF etching result in surface smoothing, in reasonable agreement with the AFM results. The SPM-treated surface is found to be highly hydrophilic.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotkDtPwzAYRS0EEqGw8QM8gkSKPz9jtioqlFIpSMluOcYWQXkgOx349zSC5d57ljschG6BrAE4e9zvN-9rJtZCU3GGMmBc5ZxIcY4yQijkXFN6ia5S-jqhFBwy9FZ--qFztsdN9HYe_DjjbQjezXgKuO7uAOAe18cYrPMJdyPeYYrrCnP8tKxqoak_zt00XqOLYPvkb_57hZrnbVPu8kP18lpuDrkriMhdq2QbKMhW6cIVwitbSG0ZAe20ph9aKs1U0XLuTiELzQV4LTkw2nLHLVuhh79bF6eUog_mO3aDjT8GiFk8mMWDYcIsHtgv_eBK8w</recordid><startdate>19961201</startdate><enddate>19961201</enddate><creator>Kobayashi, Kazuyuki</creator><creator>Unno, Hiroyuki</creator><creator>Takizawa, Hidekazu</creator><creator>Sadao Adachi, Sadao Adachi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19961201</creationdate><title>Chemical Treatment Effect of Si(111) Surfaces in H 2 SO 4 :H 2 O 2 Solution</title><author>Kobayashi, Kazuyuki ; Unno, Hiroyuki ; Takizawa, Hidekazu ; Sadao Adachi, Sadao Adachi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c805-cb76bf216b798c85e7a869a3019c992d9679378b44c8b4689451e964132b4c4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kobayashi, Kazuyuki</creatorcontrib><creatorcontrib>Unno, Hiroyuki</creatorcontrib><creatorcontrib>Takizawa, Hidekazu</creatorcontrib><creatorcontrib>Sadao Adachi, Sadao Adachi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kobayashi, Kazuyuki</au><au>Unno, Hiroyuki</au><au>Takizawa, Hidekazu</au><au>Sadao Adachi, Sadao Adachi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical Treatment Effect of Si(111) Surfaces in H 2 SO 4 :H 2 O 2 Solution</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996-12-01</date><risdate>1996</risdate><volume>35</volume><issue>12R</issue><spage>5925</spage><pages>5925-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Chemically treated Si(111) surfaces in an H
2
SO
4
:H
2
O
2
=4:1 (sulphuric peroxide mixture; SPM) solution at 80° C have been studied using spectroellipsometry (SE),
ex situ
atomic force microscopy (AFM) and contact-angle measurement techniques. The SE data clearly indicate that the solution causes in surface chemical oxidation. The oxidation occurs immediately upon immersing the sample in the solution. The thickness of the chemical oxide layer shows a nearly saturated value of ∼14 Å. The SE data also indicate that the chemical oxidation and subsequent HF etching result in surface smoothing, in reasonable agreement with the AFM results. The SPM-treated surface is found to be highly hydrophilic.</abstract><doi>10.1143/JJAP.35.5925</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996-12, Vol.35 (12R), p.5925 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_35_5925 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Chemical Treatment Effect of Si(111) Surfaces in H 2 SO 4 :H 2 O 2 Solution |
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