Capture cross section of electric-stress-induced interface states in (100) Si metal/oxide/semiconductor capacitors

The capture cross section of interface states induced by Fowler-Nordheim tunneling electron injection in (100) n- and p-Si metal/oxide/semiconductor (MOS) capacitors has been measured as a function of interface-state density by means of the ac conductance method. In n-Si MOS capacitors two interface...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996-12, Vol.35 (12A), p.5915-5920
Hauptverfasser:	INOUE, M, SHIMADA, A, SHIRAFUJI, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability
Online-Zugang:	Volltext
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