Formation mechanisms of the deformed oxide layer in a tungsten polycide structure
Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1996, Vol.35 (2A), p.584-588 |
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creator | MASHIKO, Y OHSAKI, A OKAMOTO, T FUKUMOTO, K KOYAMA, H |
description | Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural analyses were performed using a variety of analytical techniques such as transmission electron microscopy. The deformed oxide layer, having a pathological morphology of the oxide surface, was formed on the silicide layer during the oxide process after the removal of the surface layer of silicon oxide that initially covered the crystallized silicide film. It was revealed that destructive oxidation resulted from the formation of volatile metal-oxides, which originated during the process of low temperature annealing in ambient O
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doi_str_mv | 10.1143/JJAP.35.584 |
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fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_35_584</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3231826</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-62683e8423d8f4de2cf09decd5e489f68b5bf6230289f10178a5ed621a5857163</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKsr_0AW7mRqkpuk6bIUq5aCCroe0uTGjsyLJAXn3zul4upwOI_FR8gtZzPOJTxsNsu3GaiZMvKMTDjIeSGZVudkwpjghVwIcUmuUvoerVaST8j7uouNzVXX0gbd3rZVahLtAs17pB7DmKKn3U_lkdZ2wEirllqaD-1XytjSvqsHdwxTjgeXDxGvyUWwdcKbP52Sz_Xjx-q52L4-vayW28KBgVxooQ2gkQK8CdKjcIEtPDqvUJpF0GandkELYGJ0nPG5sQq9Ftwqo-Zcw5Tcn35d7FKKGMo-Vo2NQ8lZeaRRHmmUoMqRxti-O7V7m5ytQ7Stq9L_BARwIzT8AmnOX2Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Formation mechanisms of the deformed oxide layer in a tungsten polycide structure</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>MASHIKO, Y ; OHSAKI, A ; OKAMOTO, T ; FUKUMOTO, K ; KOYAMA, H</creator><creatorcontrib>MASHIKO, Y ; OHSAKI, A ; OKAMOTO, T ; FUKUMOTO, K ; KOYAMA, H</creatorcontrib><description>Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural analyses were performed using a variety of analytical techniques such as transmission electron microscopy. The deformed oxide layer, having a pathological morphology of the oxide surface, was formed on the silicide layer during the oxide process after the removal of the surface layer of silicon oxide that initially covered the crystallized silicide film. It was revealed that destructive oxidation resulted from the formation of volatile metal-oxides, which originated during the process of low temperature annealing in ambient O
2
.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.584</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1996, Vol.35 (2A), p.584-588</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-62683e8423d8f4de2cf09decd5e489f68b5bf6230289f10178a5ed621a5857163</citedby><cites>FETCH-LOGICAL-c383t-62683e8423d8f4de2cf09decd5e489f68b5bf6230289f10178a5ed621a5857163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4023,27922,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3231826$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MASHIKO, Y</creatorcontrib><creatorcontrib>OHSAKI, A</creatorcontrib><creatorcontrib>OKAMOTO, T</creatorcontrib><creatorcontrib>FUKUMOTO, K</creatorcontrib><creatorcontrib>KOYAMA, H</creatorcontrib><title>Formation mechanisms of the deformed oxide layer in a tungsten polycide structure</title><title>Japanese Journal of Applied Physics</title><description>Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural analyses were performed using a variety of analytical techniques such as transmission electron microscopy. The deformed oxide layer, having a pathological morphology of the oxide surface, was formed on the silicide layer during the oxide process after the removal of the surface layer of silicon oxide that initially covered the crystallized silicide film. It was revealed that destructive oxidation resulted from the formation of volatile metal-oxides, which originated during the process of low temperature annealing in ambient O
2
.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKsr_0AW7mRqkpuk6bIUq5aCCroe0uTGjsyLJAXn3zul4upwOI_FR8gtZzPOJTxsNsu3GaiZMvKMTDjIeSGZVudkwpjghVwIcUmuUvoerVaST8j7uouNzVXX0gbd3rZVahLtAs17pB7DmKKn3U_lkdZ2wEirllqaD-1XytjSvqsHdwxTjgeXDxGvyUWwdcKbP52Sz_Xjx-q52L4-vayW28KBgVxooQ2gkQK8CdKjcIEtPDqvUJpF0GandkELYGJ0nPG5sQq9Ftwqo-Zcw5Tcn35d7FKKGMo-Vo2NQ8lZeaRRHmmUoMqRxti-O7V7m5ytQ7Stq9L_BARwIzT8AmnOX2Q</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>MASHIKO, Y</creator><creator>OHSAKI, A</creator><creator>OKAMOTO, T</creator><creator>FUKUMOTO, K</creator><creator>KOYAMA, H</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1996</creationdate><title>Formation mechanisms of the deformed oxide layer in a tungsten polycide structure</title><author>MASHIKO, Y ; OHSAKI, A ; OKAMOTO, T ; FUKUMOTO, K ; KOYAMA, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-62683e8423d8f4de2cf09decd5e489f68b5bf6230289f10178a5ed621a5857163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MASHIKO, Y</creatorcontrib><creatorcontrib>OHSAKI, A</creatorcontrib><creatorcontrib>OKAMOTO, T</creatorcontrib><creatorcontrib>FUKUMOTO, K</creatorcontrib><creatorcontrib>KOYAMA, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MASHIKO, Y</au><au>OHSAKI, A</au><au>OKAMOTO, T</au><au>FUKUMOTO, K</au><au>KOYAMA, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation mechanisms of the deformed oxide layer in a tungsten polycide structure</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996</date><risdate>1996</risdate><volume>35</volume><issue>2A</issue><spage>584</spage><epage>588</epage><pages>584-588</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural analyses were performed using a variety of analytical techniques such as transmission electron microscopy. The deformed oxide layer, having a pathological morphology of the oxide surface, was formed on the silicide layer during the oxide process after the removal of the surface layer of silicon oxide that initially covered the crystallized silicide film. It was revealed that destructive oxidation resulted from the formation of volatile metal-oxides, which originated during the process of low temperature annealing in ambient O
2
.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.35.584</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Formation mechanisms of the deformed oxide layer in a tungsten polycide structure |
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