Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
This paper proposes a new empirical expression of the collector current in multifinger HBTs (Heterojunction Bipolar Transistors) as a function of the junction temperature, which is essential for optimizing the device layout and the ballasting resistor. The novel calculation yields more precise agree...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1996, Vol.35 (2R), p.574 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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